100 Flash Memory 469

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
IS21ES08GA-JQLI	Integrated Silicon Solution	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, LOW PROFILE	BGA100,11X17,40			1 mm	85 Cel		8GX8	8G	-40 Cel		YES			BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		200 MHz	14 mm		68719476736 bit	2.7 V					NAND TYPE		18 mm		3.3	NO
MTFC32GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		274877906944 bit	2.7 V		e1	30	260			18 mm		2.7
MTFC32GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40			1 mm	85 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100		3.6 V	1.2 mm		200 MHz	14 mm		274877906944 bit	2.7 V		e1	30	260	NAND TYPE		18 mm		2.7	NO
MTFC8GAMALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		68719476736 bit	2.7 V		e1	30	260			18 mm		2.7
MTFC32GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40			1 mm	105 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100		3.6 V	1.2 mm		200 MHz	14 mm		274877906944 bit	2.7 V		e1	30	260	NAND TYPE		18 mm		2.7	NO
MTFC32GJDDQ-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL										GRID ARRAY, LOW PROFILE				1 mm								TIN SILVER COPPER		BOTTOM		R-PBGA-B100			1.4 mm			14 mm					e1			MLC NAND TYPE		18 mm		3.3
MT29F256G08AUCABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40	Flash Memories		1 mm	85 Cel				-40 Cel	32K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified	274877906944 bit		8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MTFC32GAZAQDW-AAT	Micron Technology	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.5 mm		200 MHz	14 mm		274877906944 bit	2.7 V					NAND TYPE		18 mm		3.3
MTFC8GAMALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		68719476736 bit	2.7 V		e1	30	260			18 mm		2.7
MT29F64G08AECABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40	Flash Memories		1 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified	68719476736 bit		8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F16G08ABCCBH1-10ITZ:C	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories		1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm	Not Qualified	17179869184 bit	2.7 V	4K				SLC NAND TYPE	.00005 Amp	18 mm	20 ns	2.7	NO
FEMC032GTTE7-T13-26	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					34359738368 words	3.3			8						85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B100								274877906944 bit						MLC NAND TYPE
IS21ES04G-JQLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			1	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		32GX1	32G	-40 Cel			Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)		BOTTOM		R-PBGA-B100	3	3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1	10	260	SLC NAND TYPE		18 mm		3.3
MTFC32GAZAQDW-AATTR	Micron Technology	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.5 mm		200 MHz	14 mm		274877906944 bit	2.7 V					NAND TYPE		18 mm		3.3
IS21ES04G-JQLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3	3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1	10	260			18 mm		3.3
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		137438953472 bit	2.7 V		e1	30	260			18 mm		2.7
MT29F32G08ABCABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40	Flash Memories		1 mm	85 Cel		4GX8	4G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified	34359738368 bit		8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MTFC4GACAANA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm		34359738368 bit	2.7 V			30	260	MLC NAND TYPE		18 mm		3.3
MTFC4GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm		34359738368 bit	2.7 V		e1	30	260	MLC NAND TYPE		18 mm		3.3	NO
MT29F128G08AKCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40	Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified	137438953472 bit		8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		549755813888 bit	2.7 V		e1	30	260			18 mm		2.7
MT29F16G08ABCCBH1-AAT:C	Micron Technology	FLASH		100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		10	1 mm	105 Cel	3-STATE	2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm	80000 Write/Erase Cycles		12 mm		17179869184 bit	2.7 V	4K				SLC NAND TYPE	.00005 Amp	18 mm	20 ns	3.3	NO
MTFC4GLGDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V		e1	30	260	MLC NAND TYPE		18 mm		2.7
FEMC004GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3			8						85 Cel		4GX8	4G	-25 Cel					BOTTOM		R-PBGA-B100								34359738368 bit						SLC NAND TYPE
FEMC008GTTG7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100								68719476736 bit						MLC NAND TYPE
FEMC008GTTG7-T13-17	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100								68719476736 bit						SLC NAND TYPE
FEMC016GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B100								137438953472 bit						MLC NAND TYPE
FEMC016GTTE7-T13-27	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B100								137438953472 bit						SLC NAND TYPE
FEMC016GTTG7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100								137438953472 bit						MLC NAND TYPE
MT29F32G08ABCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40	Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified	34359738368 bit		8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MTFC4GLMDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm		34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm
FEMC004GTTG7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3			8						85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100								34359738368 bit						MLC NAND TYPE
FEMC004GTTG7-T13-17	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3			8						85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100								34359738368 bit						SLC NAND TYPE
FEMC008GTTA7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100								68719476736 bit						MLC NAND TYPE
FEMC008GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B100								68719476736 bit						MLC NAND TYPE
FEMC008GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8						85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B100								68719476736 bit						SLC NAND TYPE
FEMC016GTTA7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100								137438953472 bit						MLC NAND TYPE
FEMC016GTTG7-T13-27	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8						85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100								137438953472 bit						SLC NAND TYPE
EPC4QC100N	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK		Flash Memories			70 Cel	3-STATE	4MX1	4M	0 Cel			MATTE TIN		QUAD		R-PQFP-G100	3	3.6 V		100000 Write/Erase Cycles	66.7 MHz		Not Qualified	4194304 bit	3 V		e3			NOR TYPE	.00015 Amp
MTFC64GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40			1 mm	85 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100		3.6 V	1.2 mm		200 MHz	14 mm		549755813888 bit	2.7 V		e1	30	260	NAND TYPE		18 mm		2.7	NO
EPC4QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9	Flash Memories		.65 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			TIN LEAD		QUAD		R-PQFP-G100	3	3.6 V	3.4 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	4194304 bit	3 V		e0				.00015 Amp	20 mm
GLS85VM1016B-M-I-LFWE-ND212	Greenliant Systems	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100		3.3 V	1.4 mm		52 MHz	14 mm		137438953472 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm		2.7
MTFC16GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3	3.6 V	1.2 mm			14 mm		137438953472 bit	2.7 V		e1	30	260			18 mm		2.7
MTFC16GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		137438953472 bit	2.7 V		e1	30	260			18 mm		2.7
MTFC8GAMALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm		68719476736 bit	2.7 V					NAND TYPE		18 mm
MT29F128G08CECABH1-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm		137438953472 bit	2.7 V		e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CMCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			12 mm		274877906944 bit	2.7 V		e1			MLC NAND TYPE		18 mm		2.7
MTFC128GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm		1099511627776 bit	2.7 V		e1	30	260			18 mm		2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.