16 Flash Memory 2,090

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
N25Q256A73ESFH0F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel	256MX1	256M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm			268435456 bit	2.7 V				NOR TYPE		10.3 mm	3
M25PX64STVMF3TGA	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	8388608 words		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories		1.27 mm	125 Cel	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	67108864 bit					NOR TYPE	.00001 Amp
N25Q256A13ESFA0G	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE					1.27 mm	125 Cel	256MX1	256M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm			268435456 bit	2.7 V		30	260	NOR TYPE		10.3 mm	3
MT25TL256HBA8ESF-0SAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	35 mA	33554432 words	3		8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	105 Cel	32MX8	32M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		133 MHz	7.5 mm		SPI	268435456 bit	2.7 V				NOR TYPE	.00008 Amp	10.3 mm	3
M25PX64SOVMF3T	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE					1.27 mm	125 Cel	8MX8	8M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		75 MHz	7.5 mm			67108864 bit	2.7 V						10.3 mm	2.7
N25Q512A43GSF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel	512MX1	512M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm			536870912 bit	2.7 V				NOR TYPE		10.3 mm	3
N25Q00AA33GSFH0F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1073741824 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel	1GX1	1G	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm			1073741824 bit	2.7 V				NOR TYPE		10.3 mm	3
M25PX64SOVMF3TGBA	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	8388608 words		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories		1.27 mm	125 Cel	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	67108864 bit					NOR TYPE	.00001 Amp
N25Q128A41ESFA0G	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE					1.27 mm	125 Cel	128MX1	128M	-40 Cel		DUAL		R-PDSO-G16	2 V	2.65 mm		108 MHz	7.5 mm			134217728 bit	1.7 V				NOR TYPE		10.3 mm	1.8
N25Q512A73GSFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel	512MX1	512M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm			536870912 bit	2.7 V				NOR TYPE		10.3 mm	3
M25P64-VMF6TPA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	8388608 words		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified	SPI	67108864 bit	2.7 V		30	260	NOR TYPE	.0001 Amp	10.3 mm	2.7
M25PX64SOVMF3TB	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE					1.27 mm	125 Cel	8MX8	8M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		75 MHz	7.5 mm			67108864 bit	2.7 V						10.3 mm	2.7
N25Q064A13ESFD0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		20 mA	8388608 words		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI	67108864 bit					NOR TYPE	.0001 Amp
N25Q256A31ESFA0E	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE					1.27 mm	125 Cel	256MX1	256M	-40 Cel		DUAL		R-PDSO-G16	2 V	2.65 mm		108 MHz	7.5 mm			268435456 bit	1.7 V						10.3 mm	1.8
M25PX32SVMF6FB	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	4194304 words		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	33554432 bit					NOR TYPE	.00001 Amp
M25PX64SVMF3TGBA	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	8388608 words		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories		1.27 mm	125 Cel	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	67108864 bit					NOR TYPE	.00001 Amp
M25P32SVMF6TGB	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE					1.27 mm	85 Cel	4MX8	4M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		75 MHz	7.5 mm			33554432 bit	2.7 V				NOR TYPE		10.3 mm	2.7
MT25TL256HBA8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel	32MX8	32M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		133 MHz	7.5 mm			268435456 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3
M25PX16SVMF6TG	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	2097152 words		2.5/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	16777216 bit					NOR TYPE	.00001 Amp
N25Q064A31ESFH0F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel	64MX1	64M	-40 Cel		DUAL		R-PDSO-G16	2 V	2.65 mm		108 MHz	7.5 mm			67108864 bit	1.7 V				NOR TYPE		10.3 mm	1.8
N25Q256A13ESFH0F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	268435456 words	3	3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	256MX1	256M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI	268435456 bit	2.7 V	e3			NOR TYPE	.0001 Amp	10.3 mm	3
N25Q064A33ESFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel	64MX1	64M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm			67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3
M25PX16STVMF6GBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	2097152 words		2.5/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	16777216 bit					NOR TYPE	.00001 Amp
M25PX16SOVMF3PB	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	2097152 words		2.5/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel	2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	16777216 bit					NOR TYPE	.00001 Amp
M25PX16SOVMF6TGBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	2097152 words		2.5/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI	16777216 bit					NOR TYPE	.00001 Amp
M25P16-VMF3TPBA	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words			8	SMALL OUTLINE					1.27 mm	125 Cel	2MX8	2M	-40 Cel		DUAL		R-PDSO-G16	3.6 V	2.65 mm		75 MHz	7.5 mm			16777216 bit	2.7 V				NOR TYPE		10.3 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.