Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
64MX8 |
64M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
35 ns |
2.7 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
32MX8 |
32M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
35 ns |
2.7 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
2MX8 |
2M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
16777216 bit |
3 V |
45 ns |
3 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
16MX8 |
16M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
134217728 bit |
2.7 V |
CONTAINS ADDITIONAL 4M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
128MX8 |
128M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
CONTAINS ADDITIONAL 32M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
1030792151040 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
960GX8 |
960G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.25 V |
7 mm |
69.85 mm |
8246337208320 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
100.2 mm |
5 |
||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
128MX8 |
128M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
CONTAINS ADDITIONAL 32M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
2MX8 |
2M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
16777216 bit |
3 V |
45 ns |
3 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
64MX8 |
64M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
CONTAINS ADDITIONAL 16M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
64MX8 |
64M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
CONTAINS ADDITIONAL 16M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
10 |
55 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
67108864 bit |
2.7 V |
HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE |
2.7 |
|||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
32MX8 |
32M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
CONTAINS ADDITIONAL 8M BIT NAND FALSH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
64MX8 |
64M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
CONTAINS ADDITIONAL 16M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
10 |
55 Cel |
2MX8 |
2M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
5.5 V |
Not Qualified |
16777216 bit |
4.5 V |
HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS; 1M PROGRAM/ERASE CYCLES |
45 ns |
5 |
|||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
32MX8 |
32M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
35 ns |
2.7 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
4MX8 |
4M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
33554432 bit |
3 V |
35 ns |
3 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
2MX8 |
2M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
16777216 bit |
3 V |
45 ns |
3 |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128849018880 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
1.27 mm |
70 Cel |
120GX8 |
120G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.25 V |
7 mm |
69.85 mm |
1030792151040 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
100.2 mm |
5 |
|||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
32MX8 |
32M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
35 ns |
2.7 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
32MX8 |
32M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
CONTAINS ADDITIONAL 8M BIT NAND FALSH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
3-STATE |
4MX8 |
4M |
0 Cel |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
33554432 bit |
3 V |
3 |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
16MX8 |
16M |
0 Cel |
UNSPECIFIED |
R-XXMA-X22 |
3.6 V |
Not Qualified |
134217728 bit |
2.7 V |
CONTAINS ADDITIONAL 4M BIT NAND FLASH |
35 ns |
2.7 |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
2061584302080 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1920GX8 |
1920G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.25 V |
7 mm |
69.85 mm |
16492674416640 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
100.2 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH MODULE |
22 |
XMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
257698037760 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
240GX8 |
240G |
0 Cel |
UNSPECIFIED |
R-XXMA-N22 |
5.25 V |
7 mm |
69.85 mm |
2061584302080 bit |
4.75 V |
MLC NAND TYPE |
100.2 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH MODULE |
22 |
XMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
8246337208320 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
7.68TX8 |
7.68T |
0 Cel |
UNSPECIFIED |
R-XXMA-N22 |
5.25 V |
7 mm |
69.85 mm |
65970697666560 bit |
4.75 V |
MLC NAND TYPE |
100.2 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
INDUSTRIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
68719476736 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
64GX8 |
64G |
-40 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7.2 mm |
69.85 mm |
549755813888 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
XFM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
1030792151040 words |
5 |
8 |
FLANGE MOUNT |
70 Cel |
960GX8 |
960G |
0 Cel |
NO |
UNSPECIFIED |
R-XXFM-X22 |
5.5 V |
7 mm |
69.85 mm |
8246337208320 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
NO |
|||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
INDUSTRIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
137438953472 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
128GX8 |
128G |
-40 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7.2 mm |
69.85 mm |
1099511627776 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
INDUSTRIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
68719476736 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
64GX8 |
64G |
-40 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7.2 mm |
69.85 mm |
549755813888 bit |
4.5 V |
LENGTH_MAX |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
257698037760 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
240GX8 |
240G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
2061584302080 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
515396075520 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
480GX8 |
480G |
0 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7.2 mm |
69.85 mm |
4123168604160 bit |
4.5 V |
LENGTH_MAX |
MLC NAND TYPE |
100.5 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
515396075520 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
480GX8 |
480G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
4123168604160 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
515396075520 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
480GX8 |
480G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
4123168604160 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
INDUSTRIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
34359738368 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
32GX8 |
32G |
-40 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7.2 mm |
69.85 mm |
274877906944 bit |
4.5 V |
LENGTH_MAX |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SERIAL |
ASYNCHRONOUS |
68719476736 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64GX8 |
64G |
0 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7 mm |
69.85 mm |
549755813888 bit |
4.5 V |
MLC NAND TYPE |
100.5 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128849018880 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
120GX8 |
120G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
1030792151040 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
COMMERCIAL |
22 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
UNCASED CHIP |
UPPER |
R-XUUC-N22 |
7 mm |
69.85 mm |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
100.5 mm |
3.3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
1030792151040 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
960GX8 |
960G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
8246337208320 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128849018880 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
120GX8 |
120G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
1030792151040 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
858993459200 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
800GX8 |
800G |
0 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7.2 mm |
69.85 mm |
6871947673600 bit |
4.5 V |
LENGTH_MAX |
MLC NAND TYPE |
100.5 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
1030792151040 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
960GX8 |
960G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
8246337208320 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
515396075520 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
480GX8 |
480G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
4123168604160 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128849018880 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
120GX8 |
120G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
1030792151040 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SERIAL |
ASYNCHRONOUS |
68719476736 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64GX8 |
64G |
0 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7 mm |
69.85 mm |
549755813888 bit |
4.5 V |
MLC NAND TYPE |
100.5 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128849018880 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
120GX8 |
120G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
1030792151040 bit |
4.5 V |
MLC NAND TYPE |
100.45 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
22 |
SMA |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128849018880 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
120GX8 |
120G |
0 Cel |
SINGLE |
R-XSMA-N22 |
5.5 V |
7 mm |
69.85 mm |
1030792151040 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
100.5 mm |
5 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SERIAL |
ASYNCHRONOUS |
137438953472 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128GX8 |
128G |
0 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7 mm |
69.85 mm |
1099511627776 bit |
4.5 V |
MLC NAND TYPE |
100.5 mm |
5 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH MODULE |
COMMERCIAL |
22 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SERIAL |
ASYNCHRONOUS |
137438953472 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128GX8 |
128G |
0 Cel |
SINGLE |
R-XSMA-X22 |
5.5 V |
7 mm |
69.85 mm |
1099511627776 bit |
4.5 V |
MLC NAND TYPE |
100.5 mm |
5 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.