24 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FL164K0XBHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	105 Cel		16MX4	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e1			NOR TYPE	.000005 Amp	8 mm	3
S25HL01GTFABHV033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL116K0XBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
S25HS512TFABHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25FL116K0XBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		4MX4	4M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e1			NOR TYPE		8 mm	3
S25HL01GTDPBHB033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25HL512TFABHI010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL164K0XBHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		16MX4	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e1			NOR TYPE	.000005 Amp	8 mm	3
S25HL512TFABHB010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL116K0XBHA030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						8 mm	3
S25FL116K0XBHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel		4MX4	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e1			NOR TYPE	.000005 Amp	8 mm	3
S25HL01GTFABHA033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25HS512TDPBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL01GTDPBHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL116K0XBHB033	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						8 mm	3
S25HS01GTDPBHI033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HL512TFABHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL164K0XBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		16MX4	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e1			NOR TYPE	.000005 Amp	8 mm	3
S25HS512TDPBHB010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25FL164K0XBHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		16777216 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		16MX4	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1						8 mm	3
S25FL116K0XBHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						8 mm	3
S25HL01GTDPBHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL132K0XBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8388608 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		8MX4	8M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm			33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						8 mm	3
S25HS512TDSBHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHM013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL01GTFABHI030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25HS01GTDPBHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HS01GTDPBHM030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25FL116K0XBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						8 mm	3
S25FL116K0XBHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		4MX4	4M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e1			NOR TYPE		8 mm	3
S25FL132K0XBHA030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8388608 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		8MX4	8M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm			33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						8 mm	3
S25HL512TDPBHA010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL116K0XBHI030	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	16777216 bit	2.7 V					NOR TYPE	.000005 Amp	8 mm	3
S25HS01GTDPBHI030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25FL116K0XBHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						8 mm	3
S25FL164K0XBHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e1			NOR TYPE	.000005 Amp	8 mm	3
S25HS512TFABHM013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS01GTFABHM030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HL512TDPBHM013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HS01GTFABHB033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HL01GTFABHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL132K0XBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		8MX4	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e1			NOR TYPE	.000005 Amp	8 mm	3
S25HS01GTFABHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HS512TDPBHA013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL01GTFABHM033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL116K0XBHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4194304 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		4MX4	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						8 mm	3
S25FL164K0XBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		16777216 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		16MX4	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm			67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1						8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.