24 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
S25FL256SAGBAEC00	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel		3-STATE	32MX8	32M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S25FL256SDPBAEA03	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel		3-STATE	32MX8	32M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	66 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S26KS512SDGBHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE					1 mm	125 Cel			64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm					536870912 bit	1.7 V							8 mm	96 ns	1.8
S25HS01GTFABHM033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel			128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm		1.8
S25HS02GTDPBHA053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm		1.8
S25FL256LDPBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25HS02GTFABHA053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm		1.8
S25FL256LDPBHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25HL512TDPBHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm		3
S25FL132K0XBHB020	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		3-STATE	4MX8	4M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm			SPI		33554432 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm		3
S25HL512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm		3
S25FS256SDSBHI200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25FL256LDPBHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL128SDPBHEA10	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel		3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	66 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S25FS256SAGBHM200	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	125 Cel		3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25HS04GTDPBHA050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	175 mA	4294967296 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		4294967296 bit	1.7 V					NOR TYPE	.000065 Amp	8 mm		1.8
S25FL128LDPBHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	105 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL128LDPBHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel			32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		66 MHz	6 mm					134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm		3
S25FL256LDPBHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25HL02GTDPBHI053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		2147483648 bit	2.7 V					NOR TYPE	.000041 Amp	8 mm		3
S25FL256LAGBHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25HS512TFABHI010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm		1.8
S25FL128SAGBHBB13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel			32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm		3
S25FL256SAGBHID00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel			64MX4	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25FL256LAGBHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL256SDSBHIB03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel			64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm		3
S25FL512SDSBHID13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm		3
S25FL128SDPBHVD01	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel			16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm		3
S25FS256SDSBHA303	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			2	1 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm		1.8
S25HS02GTFABHM053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.00011 Amp	8 mm		1.8
S25HS512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm		1.8
S25HL512TFABHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm		3
S25FL128LAGBHN030	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel			32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm		3
S25FS256SDSBHM203	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	125 Cel		3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25FS064SAGBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	125 Cel	NO		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm			SPI		67108864 bit	1.7 V						.00009 Amp	8 mm		1.8
S25HL512TDPBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm		3
S25HL01GTDPBHM033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel			128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm		3
S25HS512TFABHB010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm		1.8
S25FL128LAGBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25HS02GTFABHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.000045 Amp	8 mm		1.8
S25FL256LAGBHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel			64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm		3
S25HS02GTFABHI050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm		1.8
S25HS512TDSBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm		1.8
S25FL132K0XBHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel			8MX4	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e1			NOR TYPE	.000005 Amp	8 mm		3
S25FL128LDPBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	105 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL512SDSBAEA13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S25FS256SAGBHV303	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			2	1 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25HS02GTDPBHB053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.000045 Amp	8 mm		1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.