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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT45DB642D-TU	Atmel	FLASH	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	Flash Memories	20	.55 mm	85 Cel		64MX1	64M	-40 Cel			Matte Tin (Sn)	DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm	Not Qualified		SPI	67108864 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 1056 BYTES EACH		e3	40	260	NOR TYPE	.000015 Amp	11.8 mm		2.7
AT45DB321D-TU	Atmel	FLASH	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	Flash Memories	20	.55 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G28	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm	Not Qualified		SPI	33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3	40	260	NOR TYPE	.00001 Amp	11.8 mm		2.7
AT29C256-12PI	Atmel	FLASH	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0			NOR TYPE	.0003 Amp	36.95 mm	120 ns	5	YES
AT45DB321D-TU-SL383	Dialog Semiconductor	FLASH		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3			1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		20	.55 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm			SPI	33554432 bit	2.7 V						NOR TYPE	.00005 Amp	11.8 mm		2.7
AT45DB081B-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	1081344 words	3		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	Flash Memories		.55 mm	70 Cel		1081344X8	1081344	0 Cel			TIN LEAD	DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		20 MHz	8 mm	Not Qualified		SPI	8650752 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	11.8 mm		2.7
AT45DB321C-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	Flash Memories		.55 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD	DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		40 MHz	8 mm	Not Qualified		SPI	33554432 bit	2.7 V	ORGANISED AS 8192 PAGES OF 528 BYTES EACH		e0			NOR TYPE	.000015 Amp	11.8 mm		2.7
SMJ28F010B-15FEM	Texas Instruments	FLASH	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-55 Cel		YES		QUAD		R-CQCC-N28		5.5 V	2.01 mm	10000 Write/Erase Cycles		8.89 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE					NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS29F258-250JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-200JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-250JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-200JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-170JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F258-20JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-300NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-PDIP-T28		5.25 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	300 ns	5	YES
TMS29F256-300JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-170JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V						NOR TYPE			170 ns	5
TMS29F258-30JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
SMJ28F010B-12FEM	Texas Instruments	FLASH	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-55 Cel		YES		QUAD		R-CQCC-N28		5.5 V	2.01 mm	10000 Write/Erase Cycles		8.89 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE					NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS29F256-200JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-250JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-20JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-200JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-200JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-30JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-170JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F258-30NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	300 ns	5	YES
TMS29F258-250JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-170NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-PDIP-T28		5.25 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	170 ns	5	YES
TMS29F256-200JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-250JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V						NOR TYPE			250 ns	5
TMX29F256JL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	70 Cel		32KX8	32K	0 Cel	512	NO		DUAL		R-XDIP-T28							Not Qualified			262144 bit			64				NOR TYPE	.0025 Amp		170 ns		YES
TMS29F256-170JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F258-170JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F256-300NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-PDIP-T28		5.25 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	300 ns	5	YES
TMS29F258-30JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-300JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-30JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-300JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-200JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-20JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-200JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-20JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-250JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-20JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-25JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-250JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL		R-GDIP-T28		5.25 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-200NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-PDIP-T28		5.25 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	200 ns	5	YES
TMS29F256-30JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL		R-GDIP-T28		5.5 V	4.907 mm			15.24 mm	Not Qualified			262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.