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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS29F258-30JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-300JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-25JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-300JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-30JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-170JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F256-20JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-250JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-170JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F258-30JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-170JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F256-250JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-30NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	300 ns	5	YES
TMS29F258-300JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-300JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-20NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	200 ns	5	YES
TMS29F258-25NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	250 ns	5	YES
TMS29F258-300JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-250NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.25 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	250 ns	5	YES
TMS29F256-25JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-200JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-25JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMX29F256NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel		32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28					Not Qualified	262144 bit			64			NOR TYPE	.0025 Amp		170 ns		YES
SMJ28F010B-20FEM	Texas Instruments	FLASH	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	Flash Memories	1.27 mm	125 Cel		128KX8	128K	-55 Cel		YES	QUAD	R-CQCC-N28	5.5 V	2.01 mm	10000 Write/Erase Cycles	8.89 mm	Not Qualified	1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	13.97 mm	200 ns	12	NO
TMS29F256-200JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-25JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-20JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-20JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-170NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.25 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	170 ns	5	YES
TMS29F258-25JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-170JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F256-20JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-30JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V					NOR TYPE			300 ns	5
TMS29F256-25NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	250 ns	5	YES
TMS29F258-200JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-25JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V					NOR TYPE			250 ns	5
TMS29F256-300JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-300JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V					NOR TYPE			300 ns	5
TMS29F256-250NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.25 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	250 ns	5	YES
TMS29F256-30JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-250JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-300JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-20NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	200 ns	5	YES
TMS29F256-25JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-200JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V					NOR TYPE			200 ns	5
TMS29F258-20JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F258-20JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V					NOR TYPE			200 ns	5
TMS29F258-25JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.