32 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29F040B-90JF	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	5	YES
SST39SF040-55-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	260	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
SST39SF010A-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3		245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39SF040-55-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES			QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
AM29F040B-70JF	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	260	NOR TYPE	.000005 Amp	13.97 mm	70 ns	5	YES
SST39SF010A-70-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39SF010A-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	MATTE TIN		DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified			1048576 bit	4.5 V		e3			NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
SST39SF040-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	Matte Tin (Sn)		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39SF040-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified			4194304 bit	4.5 V		e3			NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
SST39VF040-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	2.7 V		e3		260	NOR TYPE	.000015 Amp	12.4 mm	70 ns	3	YES
SST39SF040-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	4.5 V		e3	30	260	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
SST39SF010A-55-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
AM29F010B-70JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm		.00007 ms		1048576 bit	4.5 V					NOR TYPE	.000005 Amp	13.97 mm	70 ns	5	YES
SST39SF010A-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3		245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39VF020-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	30 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	Flash Memories	100	.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)		DUAL	1	R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			2097152 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	12.4 mm	70 ns	3	YES
MX29F040CQI-70G	Macronix	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	260	NOR TYPE	.000005 Amp	14.05 mm	70 ns	5	YES
SST39SF020A-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	64	YES	Matte Tin (Sn)		DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified			2097152 bit	4.5 V		e3			NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
SST39SF010A-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			1048576 bit	4.5 V		e3		260	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
SST39SF040-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	Matte Tin (Sn)		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	4.5 V		e3	40	260	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
AM29F010B-70JI	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm		.00007 ms		1048576 bit	4.5 V					NOR TYPE	.000005 Amp	13.97 mm	70 ns	5	YES
SST39VF040-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3		245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
SST39SF040-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3		245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39VF040-70-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	3.6 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3		245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
GLS29EE512-70-4I-NHE	Greenliant Systems	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel					QUAD		R-PQCC-J32	3	5.5 V	3.556 mm		11.43 mm		10 ms		524288 bit	4.5 V							13.97 mm	70 ns	5
AM29F040B-55JF	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3	5.25 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.75 V		e3	40	260	NOR TYPE	.000005 Amp	13.97 mm	55 ns	5	YES
AM29F040B-70JF\T	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			524288 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		512KX8	512K	-40 Cel			MATTE TIN		QUAD		R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified			4194304 bit	4.5 V		e3			NOR TYPE		13.97 mm	70 ns	5
SST39SF010A-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	Matte Tin (Sn)		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			1048576 bit	4.5 V		e3	40	260	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
SST39VF040-70-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	3.6 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3		245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
AM29F010B-90PI	Spansion	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		DUAL		R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles	15.24 mm	Not Qualified			1048576 bit	4.5 V		e0		260	NOR TYPE	.000005 Amp	42.037 mm	90 ns	5	YES
SST39SF040-70-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
AM29F010B-70EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL		R-PDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles	8 mm		.00007 ms		1048576 bit	4.5 V					NOR TYPE	.000005 Amp	18.4 mm	70 ns	5	YES
SST39SF010A-70-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3		245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39SF040-70-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES			QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
SST39SF010A-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			1048576 bit	4.5 V		e3		260	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
SST39SF040-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES			DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	4.5 V					NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
AM29F010B-55JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm		.000055 ms		1048576 bit	4.5 V					NOR TYPE	.000005 Amp	13.97 mm	55 ns	5	YES
AM29F040B-90JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V		e0		260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	5	YES
SST39SF010A-55-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
AM29F002BT-55JF	Infineon Technologies	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.25 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm			TOP	2097152 bit	4.75 V					NOR TYPE	.000005 Amp	13.97 mm	55 ns	5	YES
AM29F010B-55JI	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm		.000055 ms		1048576 bit	4.5 V					NOR TYPE	.000005 Amp	13.97 mm	55 ns	5	YES
AM29LV040B-70JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e0		260	NOR TYPE	.000005 Amp	13.97 mm	70 ns	3	YES
SST39SF040-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	4.5 V		e3	30	260	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
SST39SF040-55-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES			QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
AM29LV040B-90JD	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3	40	260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	3	YES
AM29F010B-90PC	Spansion	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		DUAL		R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles	15.24 mm	Not Qualified			1048576 bit	4.5 V		e0		260	NOR TYPE	.000005 Amp	42.037 mm	90 ns	5	YES
AM29F040B-55JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	3	5.25 V	3.556 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.75 V		e0		260	NOR TYPE	.000005 Amp	13.97 mm	55 ns	5	YES
AM29LV010B-55JD	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	3			8	CHIP CARRIER			20	1.27 mm	70 Cel		128KX8	128K	0 Cel			MATTE TIN		QUAD		R-PQCC-J32	3	3.6 V	3.556 mm		11.43 mm	Not Qualified			1048576 bit	2.7 V	MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION	e3	40	260			13.97 mm	55 ns	3
CAT28F512L-12	Catalyst Semiconductor	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified			524288 bit	4.5 V		e3			NOR TYPE	.00001 Amp	42.03 mm	120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.