32 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
N28F020-150	Rochester Electronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.56 mm			11.43 mm					2097152 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE		13.97 mm	150 ns	12
AM29F010B-45JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD			R-PQCC-J32		5.25 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.000045 ms			1048576 bit	4.75 V						NOR TYPE	.000005 Amp	13.97 mm	45 ns	5	YES
AT29C020-12JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm	120 ns	5	YES
AT29C040A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0001 Amp	42.037 mm	120 ns	5	YES
AT29C040A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	2K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		225	NOR TYPE	.0003 Amp	13.97 mm	90 ns	5	YES
AT29C256-12JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0	12	225	NOR TYPE	.0003 Amp	13.97 mm	120 ns	5	YES
AT29C256-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT29C257-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT29C257-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			262144 bit	4.5 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0	30	225	NOR TYPE	.0003 Amp	13.97 mm	90 ns	5	YES
AT29C512-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			524288 bit	4.75 V		128	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT49F002AT-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	25 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
P28F001BX-B120	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm	120 ns	12	NO
AM29F002NBB-70EF	Infineon Technologies	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		10	.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES		YES	DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm				BOTTOM	2097152 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm	70 ns	5	YES
AM29F010B-45EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		10	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000045 ms			1048576 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm	45 ns	5	YES
AM29F010B-45EI	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000045 ms			1048576 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm	45 ns	5	YES
AT29C040A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0		240	NOR TYPE	.0001 Amp	18.4 mm	120 ns	5	YES
AT29LV010A-15JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	15 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	3.6 V	3.56 mm			11.43 mm	Not Qualified	20 ms			1048576 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm	150 ns	3	YES
AT45DB321-TC	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G32	3	3.6 V	1.2 mm		13 MHz	8 mm	Not Qualified		SPI		33554432 bit	2.7 V	HARDWARE DATA PROTECTION; SPI SERIAL INTERFACE		e0		240	NOR TYPE	.00001 Amp	18.4 mm		2.7
AT49LV002-90TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	3 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm	90 ns	3	YES
N28F001BX-B120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
N28F256A-120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified				262144 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
AM29F010B-55EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000055 ms			1048576 bit	4.5 V						NOR TYPE	.000005 Amp	18.4 mm	55 ns	5	YES
AM29F010B-55PI	Spansion	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	42.037 mm	55 ns	5	YES
AM29F040B-70EF	Spansion	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	70 ns	5	YES
AM29LV010B-90JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	20	1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	2.7 V	MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION		e0		260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	3	YES
AT29BV010A-12JU	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	15 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	MATTE TIN		QUAD			R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified	20 ms		BOTTOM/TOP	1048576 bit	2.7 V			e3		245	NOR TYPE	.00005 Amp	13.97 mm	120 ns	2.7	YES
AT29C010-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	128	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	5.59 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm	120 ns	5	YES
AT29C010A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm	120 ns	5	YES
AT29C010A-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.55 mm			11.43 mm	Not Qualified				1048576 bit	4.75 V			e0			NOR TYPE		13.97 mm	70 ns	5
AT29C020-70TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1K	NO	MATTE TIN		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	2097152 bit	4.5 V			e3		260	NOR TYPE	.0003 Amp	18.4 mm	70 ns	5	YES
AT29C040A-10TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		240	NOR TYPE	.0001 Amp	18.4 mm	100 ns	5	YES
AT29C256-25JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.55 mm			11.43 mm	Not Qualified				262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	250 ns	5	YES
AT29C256-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT29C257-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.55 mm			11.43 mm	Not Qualified				262144 bit	4.75 V			e0			NOR TYPE		13.97 mm	70 ns	5
AT29C512-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			524288 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
AT29LV512-12TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128	15 mA	65536 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel	512	NO	MATTE TIN		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	20 ms			524288 bit	3 V		128	e3		260	NOR TYPE	.00005 Amp	18.4 mm	120 ns	3	YES
AT49BV020-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,248K	50 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,1	YES	TIN LEAD		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	2.7 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm	120 ns	2.7	YES
AT49F002N-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.55 mm			11.43 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm	55 ns	5	YES
AT49F002NT-90PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL			R-PDIP-T32	1	5.5 V	5.59 mm			15.24 mm	Not Qualified			TOP	2097152 bit	4.5 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm	90 ns	5	YES
AT49F040-12TI	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,496K	90 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,1	YES	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES		e0		240	NOR TYPE	.0003 Amp	18.4 mm	120 ns	5	YES
AT49LV001-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD			R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified			BOTTOM	1048576 bit	3 V			e0		225	NOR TYPE	.00005 Amp	13.97 mm	90 ns	3	YES
M29F002BT70K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN		QUAD			R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
N28F001BX-T120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
P28F001BX-T150	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm	150 ns	12	NO
TP28F512-120	Intel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.83 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
SST39VF020-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	262144 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				2097152 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
SST39SF010A-55-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES			QUAD	1		R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	4.5 V						NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
SST39SF020A-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				2097152 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.