40 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F008ALYB80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			512KX16	512K	0 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					18.4 mm	80 ns	3
TMS28F008ASYB10CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					18.4 mm	100 ns	5
TMS28F008AET80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE VCC=5V; TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F800ASYT10CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					18.4 mm	100 ns	5
TMS28F008SZT-70BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F800AEYB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					18.4 mm	70 ns	3
TMS28F210-10C3NQ	Texas Instruments	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	100 ns	12	NO
TMS28F004AET70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	130 ns	5	NO
TMS28F210-12C3NE4	Texas Instruments	FLASH	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	120 ns	12	NO
TMS28F008AZB-70BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,7	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	70 ns	3	NO
TMS28F004AET80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS28F008AEB-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,7	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008AVT100CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008SB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F800ASYB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					18.4 mm	120 ns	5
TMS28F008ASYB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			512KX16	512K	0 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					18.4 mm	80 ns	3
TMS28F008SZT-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F800AZYT10BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					18.4 mm	100 ns	5
TMS28F002AMT70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	CAN BE OPERATED AT 5V; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	130 ns	12	NO
TMS28F004AMT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	12	NO
TMS28F004AFT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	70 ns	5	NO
TMS28F008SZB-70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008SZB-70BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F210-12C4NE4	Texas Instruments	FLASH	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	120 ns	12	NO
TMS28F008EB80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F800AEYT70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					18.4 mm	70 ns	3
TMS28F008AST-70BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,7	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F040-17C3DUE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories	.5 mm	85 Cel	YES		512KX8	512K	-40 Cel	16	YES		DUAL	R-PDSO-G40			1000 Write/Erase Cycles		Not Qualified		4194304 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		170 ns		YES
TMS28F800AEYT10CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					18.4 mm	100 ns	5
TMS28F008AZYB10CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					18.4 mm	100 ns	5
TMS29LF008B-100DCDEB	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories	.5 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			BOTTOM	8388608 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		100 ns		YES
TMS28F004AFB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	70 ns	5	NO
TMS28F800ASYB10CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					18.4 mm	100 ns	5
TMS28F002AST80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS28F004AMB60CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	110 ns	12	NO
TMS28F210-10C4NL	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	100 ns	12	NO
TMS28F008AVYT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			512KX16	512K	0 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					18.4 mm	70 ns	3
TMS28F008AEYB70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					18.4 mm	70 ns	3
TMS28F800AEYT80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					18.4 mm	80 ns	3
TMS28F008LB10CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F800AEYT80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					18.4 mm	80 ns	3
TMS28F800ALYB70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					18.4 mm	70 ns	3
TMS28F008ASB-70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,7	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F800ALYB12BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					18.4 mm	120 ns	5
TMS29LF008T-90CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories	.5 mm	125 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	3	YES
TMS28F004AMB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	110 ns	12	NO
TMS29F008B-100CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories	.5 mm	125 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		100 ns		YES
TMS28F008VB10CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.