40 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F002AST60CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3		NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		110 ns	5	NO
TMS28F040-17C4DUE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel	YES		512KX8	512K	-40 Cel	16	YES			DUAL	R-PDSO-G40			10000 Write/Erase Cycles		Not Qualified		4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			170 ns		YES
TMS28F008AVB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	1048576 words			NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,7	YES			DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp			120 ns		NO
TMS28F008LT12BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3				8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F210-15C2NE	Texas Instruments	FLASH	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5		NO	5	16	IN-LINE	DIP40,.6	Flash Memories		2.54 mm	85 Cel			64KX16	64K	-40 Cel		YES			DUAL	R-PDIP-T40	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm		150 ns	12	NO
TMS28F008EB70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		100 ns	3
TMS29F008B-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			120 ns		YES
TMS28F040-17C4DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	125 Cel			512KX8	512K	-40 Cel	16	YES			DUAL	R-PDSO-G40			10000 Write/Erase Cycles				4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			170 ns		YES
TMS28F210-17C3DBWQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5		NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel		YES			DUAL	R-PDSO-G40	5.5 V	1.2 mm	1000 Write/Erase Cycles	10 mm	Not Qualified		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		170 ns	12	NO
TMS29LF008B-90DCDLB	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			90 ns		YES
TMS28F008SZB-80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
TMS28F008AET70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE TOP BOOT BLOCK				NOR TYPE		18.4 mm		100 ns	3
TMS28F800AZYT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						18.4 mm		80 ns	3
TMS28F800ALYB10CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm		100 ns	5
TMS28F004AMB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3		NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		130 ns	12	NO
TMS28F210-12C2NL4	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5		NO	5	16	IN-LINE	DIP40,.6	Flash Memories		2.54 mm	70 Cel			64KX16	64K	0 Cel		YES			DUAL	R-PDIP-T40	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm		120 ns	12	NO
TMS28F008SEB-12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F210-10C2NL	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5		NO	5	16	IN-LINE	DIP40,.6	Flash Memories		2.54 mm	70 Cel			64KX16	64K	0 Cel		YES			DUAL	R-PDIP-T40	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm		100 ns	12	NO
TMS28F008AVB120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F002AEB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3		NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		130 ns	5	NO
TMS28F008ZB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
TMS28F008EB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		100 ns	3
TMS28F008ZT80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
LE28FV1101T-15	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	3.3				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		1048576 bit	3 V							12.4 mm		150 ns	3.3
LE28F1101T-45	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V							12.4 mm		45 ns	5
LE28F4001T-15	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40	5.5 V	1.23 mm	10000 Write/Erase Cycles	10 mm	Not Qualified		4194304 bit	4.5 V					NOR TYPE	.00002 Amp	12.4 mm		150 ns	5	YES
LE28FV4001T-20	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	Flash Memories	10	.5 mm	70 Cel			512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40			10000 Write/Erase Cycles		Not Qualified		4194304 bit						NOR TYPE	.00002 Amp			200 ns		YES
LE28F4001T-20	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40	5.5 V	1.23 mm	10000 Write/Erase Cycles	10 mm	Not Qualified		4194304 bit	4.5 V					NOR TYPE	.00002 Amp	12.4 mm		200 ns	5	YES
LE28FV4001T-25	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	Flash Memories	10	.5 mm	70 Cel			512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40			10000 Write/Erase Cycles		Not Qualified		4194304 bit						NOR TYPE	.00002 Amp			250 ns		YES
LE28FV4001R-25	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	Flash Memories	10	.5 mm	70 Cel	YES		512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40			10000 Write/Erase Cycles		Not Qualified		4194304 bit						NOR TYPE	.00002 Amp			250 ns		YES
LE28F1101T-40	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V							12.4 mm		40 ns	5
LE28FV4001R-20	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	Flash Memories	10	.5 mm	70 Cel	YES		512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40			10000 Write/Erase Cycles		Not Qualified		4194304 bit						NOR TYPE	.00002 Amp			200 ns		YES
LE28F1101T-55	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V							12.4 mm		55 ns	5
LE28FV1101T-90	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	3.3				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		1048576 bit	3 V							12.4 mm		90 ns	3.3
LE28F1101T-70	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V							12.4 mm		70 ns	5
LE28F4001R-15	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	70 Cel	YES		512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40	5.5 V	1.23 mm	10000 Write/Erase Cycles	10 mm	Not Qualified		4194304 bit	4.5 V					NOR TYPE	.00002 Amp	12.4 mm		150 ns	5	YES
LE28F4001R-20	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	70 Cel	YES		512KX8	512K	0 Cel	2K	NO			DUAL	R-PDSO-G40	5.5 V	1.23 mm	10000 Write/Erase Cycles	10 mm	Not Qualified		4194304 bit	4.5 V					NOR TYPE	.00002 Amp	12.4 mm		200 ns	5	YES
LE28FV1101T-70	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	3.3				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			64KX16	64K	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		1048576 bit	3 V							12.4 mm		70 ns	3.3
M28W231-120N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	2.7 V					NOR TYPE		18.4 mm		120 ns	12
M50FW080N1TG	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	16	YES			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M28F211-90YN6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			100 Write/Erase Cycles		Not Qualified	TOP	2097152 bit			e0			NOR TYPE	.000008 Amp			90 ns		NO
M29F016D90N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V		e3/e6	40	260	NOR TYPE	.00015 Amp	18.4 mm	YES	90 ns	5	YES
M29R008B-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V					NOR TYPE		18.4 mm		150 ns	3
M29F105B-70XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			64KX16	64K	-40 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE				NOR TYPE		12.4 mm		70 ns	5
M29W004BB120N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M39432-12VNC5T	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Other Memory ICs	10	.5 mm	85 Cel			512KX8	512K	-20 Cel			TIN LEAD		DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		4194304 bit	3 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; BUILT-IN 256K BIT EEPROM	e0			NOR TYPE	.000002 Amp	18.4 mm		120 ns	3
M29F102BB55N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	MATTE TIN		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.0001 Amp	12.4 mm		55 ns	5	YES
M39432-20VNC1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Other Memory ICs	10	.5 mm	70 Cel			512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		4194304 bit	3 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; BUILT-IN 256K BIT EEPROM	e0			NOR TYPE	.000002 Amp	18.4 mm		200 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.