40 Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F211-90N3	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit			e0	NOR TYPE	.00005 Amp		90 ns		NO
M28F421-120N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOR TYPE		18.4 mm	120 ns	12
M28F411-150XN1	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	50 mA	524288 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit			e0	NOR TYPE	.0001 Amp		150 ns		NO
M28F411-100N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		NOR TYPE		18.4 mm	100 ns	12
M28F211-80YN1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK		NOR TYPE		18.4 mm	80 ns	12
M28F221-80N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK		NOR TYPE		18.4 mm	80 ns	12
M29R008T-100N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V			NOR TYPE		18.4 mm	100 ns	3
M28F102-150XN6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5		NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.75 V		e0	NOR TYPE	.0001 Amp	12.4 mm	150 ns	12	NO
M29F016B55N3	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	125 Cel			2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V		e0	NOR TYPE	.00015 Amp	18.4 mm	55 ns	5	YES
M29F105B-70N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	64KX16	64K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE		NOR TYPE		12.4 mm	70 ns	5
M28W231-N	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	50 mA	262144 words			NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			10000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit			e0	NOR TYPE	.000005 Amp		90 ns		NO
M29R008T-120N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V			NOR TYPE		18.4 mm	120 ns	3
M29W008T-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	120 ns	3	YES
M28F211-100XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK		NOR TYPE		18.4 mm	100 ns	12
M28V841-100N1R	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V		e0	NOR TYPE	.000005 Amp	18.4 mm	100 ns	12	NO
M29W008B-90N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	90 ns	3	YES
M28F411-70YN1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE			20	.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; 20 YEARS DATA RETENTION; BOOT BLOCK		NOR TYPE		18.4 mm	70 ns	12
M29W116BB120N6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			2MX8	2M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	120 ns	2.7	YES
M29W116BB120N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	2097152 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			2MX8	2M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G40					Not Qualified	BOTTOM	16777216 bit			e0	NOR TYPE	.0001 Amp		120 ns		YES
M29W008AB100N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	100 mA	1048576 words	3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	20	.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	100 ns	2.7	YES
M28F421-120XN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES		NOR TYPE		18.4 mm	120 ns	12
M29W116BB90N6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			2MX8	2M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	90 ns	2.7	YES
M29F080D70N1F	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M	0 Cel			TIN		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		8388608 bit	4.5 V		e3	NOR TYPE		18.4 mm	70 ns	5
M29W008AT90N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	100 mA	1048576 words	3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	20	.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	90 ns	2.7	YES
M29R008D-150N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V			NOR TYPE		18.4 mm	150 ns	3
M28F841-150N6R	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; SECTOR ERASE		NOR TYPE		18.4 mm	150 ns	12
M28F421-70N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOR TYPE		18.4 mm	70 ns	12
M29F102B-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	1MX16	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	4.5 V			NOR TYPE		12.4 mm	120 ns	5
M28F211-120YN1	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			100 Write/Erase Cycles		Not Qualified	TOP	2097152 bit			e0	NOR TYPE	.000005 Amp		120 ns		NO
M39432-12VNC6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Other Memory ICs	10	.5 mm	85 Cel			512KX8	512K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		4194304 bit	3 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; BUILT-IN 256K BIT EEPROM	e0	NOR TYPE	.000002 Amp	18.4 mm	120 ns	3
M29W008B-120N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	120 ns	3	YES
M28W411-180N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	25 mA	524288 words	3		NO	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit			e0	NOR TYPE	.0000012 Amp		180 ns		NO
M28F421-90N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOR TYPE		18.4 mm	90 ns	12
M28F102-200N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5				16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V			NOR TYPE		12.4 mm	200 ns	12
M29F016B70N6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V		e0	NOR TYPE	.00015 Amp	18.4 mm	70 ns	5	YES
M29F105B-90N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	65536 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE	e0	NOR TYPE	.0001 Amp	12.4 mm	90 ns	5	YES
M28V421-120N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10K ERASE/PROGRAM CYCLES		NOR TYPE		18.4 mm	120 ns	12
M29W008AB90N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE			20	.5 mm	85 Cel			1MX8	1M	-20 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		NOR TYPE		18.4 mm	90 ns	2.7
M29W008AT90N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				8	SMALL OUTLINE, THIN PROFILE			20	.5 mm	85 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		NOR TYPE		18.4 mm	90 ns	2.7
M29W008B-150N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	150 ns	3	YES
M28W431-100N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		NOR TYPE		18.4 mm	100 ns	12
M28F211-80YN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			256KX8	256K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK		NOR TYPE		18.4 mm	80 ns	12
M29W004BT55N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	85 Cel			512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	55 ns	3	YES
M28F221-90YN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK		NOR TYPE		18.4 mm	90 ns	12
M29F102B-55N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	65536 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	Flash Memories		.5 mm	85 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE	e0	NOR TYPE	.0001 Amp	12.4 mm	55 ns	5	YES
M28F221-120N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK		NOR TYPE		18.4 mm	120 ns	12
M29W004BT90N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK	e0	NOR TYPE	.0001 Amp	18.4 mm	90 ns	2.7	YES
M28F421-70XN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES		NOR TYPE		18.4 mm	70 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.