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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W800T150GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M28W800B150GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	150 ns	2.7	NO
M28W800B100GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W800B120GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W800T120GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	120 ns	2.7	NO
M28W800T100GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.6 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	100 ns	3	NO
M28W800B120GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	120 ns	2.7	NO
M28W800T150GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	150 ns	2.7	NO
M28W800T120GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W800T120GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W800B150GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	150 ns	2.7	NO
M28W800T100GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W800B150GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M28W800B120GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W800B100GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.6 V	.835 mm	6.62 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	100 ns	3	NO
M28W800B100GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W800T120GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	120 ns	2.7	NO
M28W800B150GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M28W800B100GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.6 V	.835 mm	6.62 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	100 ns	3	NO
M28W800T150GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M28W800B120GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	120 ns	2.7	NO
M28W800T150GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	150 ns	2.7	NO
M28W800T100GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.6 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK	e0	NOR TYPE	.000005 Amp	6.8 mm	YES	100 ns	3	NO
M28W800T100GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
S29AS008J70LFI042	Infineon Technologies	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.2 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit				NOR TYPE	.00003 Amp		YES	70 ns		YES
S29AS008J70LFI032	Infineon Technologies	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.2 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit				NOR TYPE	.00003 Amp		YES	70 ns		YES
S29AS008J70LFI023	Infineon Technologies	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.4 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45	1.95 V	.6 mm	2.04 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V	BOTTOM BOOT BLOCK		NOR TYPE	.00003 Amp	4.26 mm	YES	70 ns	1.8	YES
S29AS008J70LFI033	Infineon Technologies	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.2 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit				NOR TYPE	.00003 Amp		YES	70 ns		YES
S29AS008J70LFI012	Infineon Technologies	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.4 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45	1.95 V	.6 mm	2.04 mm	Not Qualified	TOP	8388608 bit	1.65 V	TOP BOOT BLOCK		NOR TYPE	.00003 Amp	4.26 mm	YES	70 ns	1.8	YES
S29AS008J70LFI013	Infineon Technologies	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.4 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45	1.95 V	.6 mm	2.04 mm	Not Qualified	TOP	8388608 bit	1.65 V	TOP BOOT BLOCK		NOR TYPE	.00003 Amp	4.26 mm	YES	70 ns	1.8	YES
S29AS008J70LFI022	Infineon Technologies	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.4 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45	1.95 V	.6 mm	2.04 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V	BOTTOM BOOT BLOCK		NOR TYPE	.00003 Amp	4.26 mm	YES	70 ns	1.8	YES
S29AS008J70LFI043	Infineon Technologies	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories	.2 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit				NOR TYPE	.00003 Amp		YES	70 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.