48 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29AL008D55TFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		512KX16	512K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3	40	260			18.4 mm		55 ns	3
S29AL008D70TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		512KX16	512K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3	40	260			18.4 mm		70 ns	3
S29AL008J70BFA020	Cypress Semiconductor	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8				85 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V						8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED					70 ns	3
S29AL016J55BFIR10	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified	TOP	16777216 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	55 ns	3	YES
S29AL032D90BFI040	Cypress Semiconductor	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE		10 mm		90 ns	3
S29AS016J70BFI032	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3	1.95 V	1 mm		6.15 mm	Not Qualified	TOP	16777216 bit	1.65 V	TOP BOOT BLOCK					NOR TYPE		8.15 mm		70 ns	1.8
S29GL032A11TFIR40	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		2MX16	2M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		BOTTOM	33554432 bit	3 V			e3	40	260	NOR TYPE		18.4 mm		110 ns	3
S29GL032N90BFA043	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm			33554432 bit	2.7 V								8.15 mm		90 ns	3
S29GL032N90BFI043	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
S29GL032N90TFI043	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL064N90TAI060	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		14 mm	Not Qualified		67108864 bit	2.7 V		8	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29JL032H90TFI310	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V			e3	40	260	NOR TYPE	.00001 Amp	18.4 mm	YES	90 ns	3	YES
S29JL032J70BHI320	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL064J60BFI120	Cypress Semiconductor	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S34ML02G100TFB000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		256MX8	256M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm			2147483648 bit	2.7 V			e3		260	SLC NAND TYPE		18.4 mm			3
S34ML04G200TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
TC58NVG0S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm					1073741824 bit	2.7 V								18.4 mm			3.3
TE28F160C3BD70A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20				.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31		TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00002 Amp	18.4 mm		70 ns	3
TE28F200B5T80	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.5 V	CONFG AS 128K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TE28F320B3TA110	Intel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL		R-PDSO-G48		3.3 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		110 ns	2.7	NO
TE28F320C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
SST38VF6401B-70I/TV	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8	e3			NOR TYPE	.00004 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3201-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	Matte Tin (Sn) - annealed		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3202-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3202C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT-BLOCK		e1	40	260	NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST38VF6404-90-5I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	PARALLEL	ASYNCHRONOUS	4K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4	e1	40	260	NOR TYPE	.00003 Amp	8 mm	YES	90 ns	3	YES
SST39LF400A-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified		4194304 bit	3 V			e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39VF1601-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
SST39VF3201-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3201B-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	Matte Tin (Sn) - annealed		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3202C-70-4I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST39VF800A-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	256	YES	MATTE TIN		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		8388608 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF800A-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	256	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		8388608 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF800A-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	256	YES	TIN SILVER COPPER		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified		8388608 bit	2.7 V			e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
SST39VF800A-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	256	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		8388608 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
TMS28F800ZT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	CONFG AS 512K X 16; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
TMS28F800SZT-70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
TMS29LF400T-120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		4194304 bit	2.7 V	CAN ALSO BE CONFIGURED AS 256K X 16					NOR TYPE		18.4 mm		120 ns	3
TMS28F200AFB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	125 Cel		128KX16	128K	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE PROGRAMMED AT 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	5
TMS28F200AFT80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G48		5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F800ET80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F400AFT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	NO
TMS29LF800B-90CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		90 ns	2.7	YES
TMS29LF800T-120EQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48				100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			120 ns		YES
TMS28F800VB12CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY						85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V				Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE				120 ns	3
TMS28F400AMB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,3	YES			DUAL		R-PDSO-G48		3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		110 ns	12	NO
TMS28F200AET70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	2.7 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		130 ns	5	NO
TMS28F800ST80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.