48 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58FVB160AFT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	80 ns	3	YES
W29N01HVSINA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
AM29F200BB-70ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		128KX16	128K	0 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
K9F5608U0D-PCB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	25 mA	33554432 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified			268435456 bit	2.7 V		512	e6		260		.00005 Amp	18.4 mm		30 ns	3.3	NO
M29W160ET70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W320DB70N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W320ET70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V			e3/e6		260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT29F16G08AJADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			17179869184 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F4G08ABADAWP-ITX:D	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified			4294967296 bit			2K		30	260	SLC NAND TYPE	.0001 Amp			25 ns		NO
MX29LV400CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	1,2,1,7	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MX30LF1G28AD-TI	Macronix	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	50 mA	134217728 words	3	NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	60000 Write/Erase Cycles	12 mm		.00002 ms		1073741824 bit	2.7 V		2K				SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
S29GL032N90BFI030	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		TOP	33554432 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
S34ML16G202TFI200	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm				17179869184 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3
SST39VF6401B-70-4C-B1KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE	.00002 Amp	10 mm	YES	70 ns	3	YES
S29JL032J60TFI410	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
AT49F1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
SST39VF3201C-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00005 Amp	18.4 mm	YES	70 ns	3	YES
MT28F800B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MBM29F160TE-70PFTN	Fujitsu Semiconductor America	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		1MX16	1M	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	4.5 V						NOR TYPE		18.4 mm		70 ns	5
MBM29F160TE70PFTN	Fujitsu	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES
S29GL064N90BFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
AT49BV162A-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.65 V			e0			NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
M29F800FB55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT29F1G08ABAFAWP-ITE:F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm				1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MT29F2G16ABAEAWP-AIT:ETR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX16	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
NAND02GW3B2DN6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48						Not Qualified			2147483648 bit			2K					.00005 Amp			20 ns		NO
S34ML08G101TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified			8589934592 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
M28W640HCB70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN/TIN BISMUTH		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4	e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
M29W640FT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
S29AL016J70BFN020	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
TE28F320C3BC90	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M28W320FCB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
MT29F2G16ABAEAWP-AIT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
S29AL008D90TFI020	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED			18.4 mm		90 ns	3
S29AS008J70TFI040	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES		YES	DUAL		R-PDSO-G48		1.95 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	1.8	YES
TE28F800C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
AM29DL800BB90EF	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	45 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	2,4,2,14	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29F160DB75EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.25 V	1.2 mm		12 mm	Not Qualified	70 ms	BOTTOM	16777216 bit	4.75 V	MIN 1000K WRITE CYCLE; CAN ALSO BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES
AT49F1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
E28F800B5B70	Intel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
K9F2808U0M-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			134217728 bit	2.7 V		512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	2.7	NO
K9F2G08U0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3					Not Qualified			2147483648 bit			2K	e6		260	SLC NAND TYPE	.00005 Amp			20 ns		NO
K9WBG08U1M-PIB0	Samsung Electro-mechanics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm				34359738368 bit	2.7 V								18.4 mm			2.7
M29F160FB5AN6F2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W160FT70N3F	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT28F800B3WG-9TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT29F1G08ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128MX8	128M	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm				1073741824 bit	2.7 V			e3	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			2.7
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm				34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.