52 Flash Memory 450

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F128G08CFAABC5-12:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	16GX8	16G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		137438953472 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABC5-12IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			85 Cel	32GX8	32G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F64G08CBAABC5-10IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			85 Cel	8GX8	8G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		68719476736 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F256G08CKCABC5-10Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	32GX8	32G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F128G08AMAAAC5-IT:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories	85 Cel	16GX8	16G	-40 Cel	16K	YES	YES	BOTTOM					Not Qualified	137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F256G08CKCABC5-10IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			85 Cel	32GX8	32G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F128G08AKAAAC5-IT:A	Micron Technology	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories	85 Cel	16GX8	16G	-40 Cel	16K	YES	YES	BOTTOM					Not Qualified	137438953472 bit		8K			SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F64G08CBAABC5-12:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	8GX8	8G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		68719476736 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F128G08CFAABC5-12Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	16GX8	16G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		137438953472 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F512G08CUAAAC5IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			85 Cel	64GX8	64G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		549755813888 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F64G08CBCABC5-12Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	8GX8	8G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		68719476736 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABC5-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			85 Cel	32GX8	32G	-40 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F512G08CUCABC5-12Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	64GX8	64G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		549755813888 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAAAC5Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	32GX8	32G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F64G08CBCABC5-10Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	8GX8	8G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		68719476736 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
NAND16GW3C4BZL1F	Micron Technology	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories	70 Cel	2GX8	2G	0 Cel	8K	YES	YES	BOTTOM					Not Qualified	17179869184 bit		2K			MLC NAND TYPE	.00005 Amp		20 ns		NO
MT29F256G08CKAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	32GX8	32G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		274877906944 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7
MT29F128G08CECABC5-10Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			70 Cel	16GX8	16G	0 Cel				BOTTOM	R-PBGA-B52	3.6 V	1 mm	14 mm		137438953472 bit	2.7 V		30	260	MLC NAND TYPE		18 mm		2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.