52 Flash Memory 450

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
SQF-SMSM4-256G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				274877906944 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	256GX8	256G	0 Cel					SINGLE	R-XSMA-N52		4.2 mm	30 mm			2199023255552 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM4-128G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				137438953472 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	128GX8	128G	0 Cel					SINGLE	R-XSMA-N52		4.2 mm	30 mm			1099511627776 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM4-512G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				549755813888 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	512GX8	512G	-40 Cel					SINGLE	R-XSMA-N52		4.2 mm	30 mm			4398046511104 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM2-64G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	64GX8	64G	0 Cel					SINGLE	R-XSMA-N52		4.2 mm	30 mm			549755813888 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM2-64G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	64GX8	64G	-40 Cel					SINGLE	R-XSMA-N52		4.2 mm	30 mm			549755813888 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM4-256G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				274877906944 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	256GX8	256G	-40 Cel					SINGLE	R-XSMA-N52		4.2 mm	30 mm			2199023255552 bit						MLC NAND TYPE		50.8 mm
LE28FV4101H-70T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	3 V							6 mm	70 ns	3
LE28FV4101H-40T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	3 V							6 mm	40 ns	3
LE28FU4101H-10T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	2.7			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	2.3 V							6 mm	100 ns	2.7
LE28FW4101H-70T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	2.7 V							6 mm	70 ns	2.7
LE28FW4101H-45T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	2.7 V							6 mm	45 ns	2.7
LE28FV4101H-50T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	3 V							6 mm	50 ns	3
LE28FU4101H-85T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	2.7			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	2.3 V							6 mm	85 ns	2.7
LE28FW4101H-55T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.65 mm	85 Cel	256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52	3.6 V	1.2 mm	6 mm	Not Qualified		4194304 bit	2.7 V							6 mm	55 ns	2.7
PSD813F1VA-20MI	STMicroelectronics	FLASH	INDUSTRIAL	52	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK, LOW PROFILE				.8 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQFP-G52	3.6 V	1.54 mm	14 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		14 mm	20 ns	3.3
PSD813F1AV-90JT	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	90 ns	3.3
PSD813F1VA-15M	STMicroelectronics	FLASH	COMMERCIAL	52	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK, LOW PROFILE				.8 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQFP-G52	3.6 V	1.54 mm	14 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		14 mm	15 ns	3.3
PSD813F1AV-70MT	STMicroelectronics	FLASH	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK				.65 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		10 mm	70 ns	3.3
PSD813F1AV-12MT	STMicroelectronics	FLASH	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK				.65 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		10 mm	12 ns	3.3
PSD813F1AV-90MIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK				.65 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		10 mm	90 ns	3.3
PSD813F1AV-12MIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK				.65 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		10 mm	12 ns	3.3
PSD813F1AV-90MT	STMicroelectronics	FLASH	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK				.65 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		10 mm	90 ns	3.3
PSD813F1AV-70JIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	70 ns	3.3
PSD813F1AV-12JT	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	12 ns	3.3
PSD813F1AV-70JT	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	70 ns	3.3
PSD813F1AV-70MIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK				.65 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		10 mm	70 ns	3.3
PSD813F1VA-20JI	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	20 ns	3.3
PSD813F1AV-12JIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	12 ns	3.3
PSD813F1VA-20UI	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	20 ns	3.3
PSD813F1AV-90JIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	85 Cel	128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	90 ns	3.3
PSD813F1VA-15J	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	128KX8	128K	0 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms	1048576 bit	3 V					NOR TYPE		19.1 mm	15 ns	3.3
NAND08GR3B4CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1048576 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	1 mm	70 Cel	1MX8	1M	0 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		8388608 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND04GR3B2DZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	1 mm	70 Cel	512KX8	512K	0 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		4194304 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND16GW3C4AZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel	2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM					Not Qualified		17179869184 bit		2K				MLC NAND TYPE	.00005 Amp		20 ns		NO
NAND04GR3B2DZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	1 mm	70 Cel	512KX8	512K	0 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		4194304 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND08GW3B4CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1048576 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	1 mm	85 Cel	1MX8	1M	-40 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		8388608 bit	2.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND04GR4B2DZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel	512KX8	512K	-40 Cel					BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		4194304 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND04GR3B2DZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	1 mm	85 Cel	512KX8	512K	-40 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		4194304 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND08GW3C4AZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GW3C2AZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel	1GX8	1G	0 Cel					BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND16GW3C4AZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel	2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM					Not Qualified		17179869184 bit		2K				MLC NAND TYPE	.00005 Amp		20 ns		NO
NAND08GR4B2CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel	1MX8	1M	0 Cel					BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		8388608 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND08GW3B2CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel	1MX8	1M	-40 Cel					BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		8388608 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND08GW4B2CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel	1MX8	1M	0 Cel					BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		8388608 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND08GW3C2AZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel	1GX8	1G	0 Cel					BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND04GR4B2DZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel	512KX8	512K	0 Cel					BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		4194304 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND04GW3B2DZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	524288 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	1 mm	85 Cel	512KX8	512K	-40 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM	R-PBGA-B52	3.6 V	.65 mm	12 mm	Not Qualified		4194304 bit	2.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GR3B2CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel	1MX8	1M	0 Cel					BOTTOM	R-PBGA-B52	1.95 V	.65 mm	12 mm	Not Qualified		8388608 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.