52 Flash Memory 450

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
K9F4G08U0M-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm	20 ns	2.7	NO
K9K2G08U1A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM							Not Qualified	2147483648 bit			2K					.00005 Amp				NO
K9F8G08U0M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM			1				Not Qualified	4294967296 bit			2K					.00005 Amp		25 ns		NO
K9WAG08U1A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		2GX8	2G	0 Cel	16K	YES		YES	BOTTOM							Not Qualified	17179869184 bit			2K					.0001 Amp		25 ns		NO
K9WBG08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel		4GX8	4G	0 Cel	16K	YES		YES	BOTTOM		R-XBGA-B52		3.6 V	1 mm	12 mm	Not Qualified	34359738368 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	17 mm	25 ns	3	NO
K9F2G08U0A-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM							Not Qualified	2147483648 bit			2K					.00005 Amp		20 ns		NO
K9F4G08U0M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U0A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		512MX8	512M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM			1				Not Qualified	4294967296 bit			2K	e3				.00005 Amp		20 ns		NO
K9WAG08U1A-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM			3				Not Qualified	17179869184 bit			2K			260		.0001 Amp		25 ns		NO
K9WAG08U1B-ICB00	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		2GX8	2G	0 Cel	16K	YES		YES	BOTTOM							Not Qualified	17179869184 bit			2K					.0002 Amp		25 ns		NO
K9F4G08U0A-I	Samsung	FLASH		52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			2 mm			512MX8	512M						BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V								17 mm		2.7
K9F2G08U0M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	1 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K				SLC NAND TYPE	.00005 Amp	17 mm	30 ns	2.7	NO
K9F4G08U0M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM			1				Not Qualified	4294967296 bit			2K					.00005 Amp		25 ns		NO
K9HBG08U1M-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		4GX8	4G	0 Cel	16K	YES		YES	BOTTOM							Not Qualified	34359738368 bit			2K					.0001 Amp		20 ns		NO
K9WAG08U1A-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel		2GX8	2G	0 Cel	16K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	17 mm	20 ns	2.7	NO
K9K2G08U1A-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM							Not Qualified	2147483648 bit			2K					.00005 Amp				NO
K9F2G08U0A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM			3				Not Qualified	2147483648 bit			2K			260		.00005 Amp		20 ns		NO
K9G8G08U0M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM							Not Qualified	8589934592 bit			2K					.00005 Amp		20 ns		NO
K9K4G08U1M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		512MX8	512M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM			1				Not Qualified	4294967296 bit			2K	e3				.00005 Amp		30 ns		NO
K9WBG08U1M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel		4GX8	4G	0 Cel	16K	YES		YES	BOTTOM							Not Qualified	34359738368 bit			4K					.0001 Amp		20 ns		NO
K9LAG08U1M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM							Not Qualified	17179869184 bit			2K					.00005 Amp		20 ns		NO
K9LAG08U1M-ICB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM							Not Qualified	17179869184 bit			2K					.00005 Amp		20 ns		NO
K9F8G08U0M-IIB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm	20 ns	2.7	NO
K9K8G08U1B-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY			1 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V								17 mm	25 ns	3.3
K9F4G08U0A-ICB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM			1				Not Qualified	4294967296 bit			2K	e3				.00005 Amp		25 ns		NO
K9K8G08U1A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel		1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM			3				Not Qualified	8589934592 bit			2K			260		.00005 Amp		20 ns		NO
K9WAG08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			2 mm	70 Cel		2GX8	2G	0 Cel					BOTTOM		R-PBGA-BU52		3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY							17 mm	20 ns	2.7
K9HCG08U1D-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	1 mm	12 mm		68719476736 bit	2.7 V						SLC NAND TYPE		17 mm		3.3
K9F2G08U0M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K				SLC NAND TYPE	.00005 Amp	17 mm	30 ns	2.7	NO
MTFDDAT240MAV-1AE12ZZYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										UNCASED CHIP													UPPER		R-XUUC-N52			3.7 mm	29.85 mm									MLC NAND TYPE		50.8 mm		3.3
MTFDDAT128MAZ-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT256MAZ-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		256GX8	256G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT256MAY-1AH1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		256GX8	256G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT120MAV-1AE11AAYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										UNCASED CHIP													UPPER		R-XUUC-N52			3.7 mm	29.85 mm									MLC NAND TYPE		50.8 mm		3.3
MTFDDAT128MAY-1AH1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT512MAY-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		512GX8	512G	0 Cel					DUAL	HARDWARE	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT128MAZ-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT128MAY-1AH12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT064MAY-1AH12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		64GX8	64G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT128MAY-1AH1ZACYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT480MAV-2AH1ZZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm	29.85 mm		4123168604160 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT256MAY-1AH12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		256GX8	256G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT064MAY-1AH12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		64GX8	64G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT128MAZ-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT480MAV-1AE12ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										UNCASED CHIP													UPPER		R-XUUC-N52			3.7 mm	29.85 mm									MLC NAND TYPE		50.8 mm		3.3
MTFDDAT064MAY-1AH1ZZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY				70 Cel		64GX8	64G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3
MTFDDAT064MAY-1AH12ABYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY				85 Cel	3-STATE	64GX8	64G	-40 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm	29.85 mm		549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm		3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.