52 Flash Memory 450

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
K9F2G08U0A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	256MX8	256M	0 Cel	2K	YES		YES	BOTTOM						Not Qualified	2147483648 bit			2K					.00005 Amp		20 ns		NO
K9KAG08U1M-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			4K					.001 Amp		20 ns
K9F2G08U0M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	256MX8	256M	0 Cel	2K	YES	MATTE TIN	YES	BOTTOM		1				Not Qualified	2147483648 bit			2K	e3				.00005 Amp		30 ns		NO
K9WAG08U1B-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	2GX8	2G	0 Cel	16K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			2K					.0002 Amp		25 ns		NO
K9KAG08U1M-IIB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel	2GX8	2G	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.001 Amp	17 mm	20 ns	2.7
K9K8G08U1A-ICB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	1GX8	1G	-40 Cel	8K	YES	MATTE TIN	YES	BOTTOM		1				Not Qualified	8589934592 bit			2K	e3				.00005 Amp		25 ns		NO
K9WAG08U1A-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	2GX8	2G	0 Cel	16K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			2K					.0001 Amp		25 ns		NO
K9WAG08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			2 mm	85 Cel	2GX8	2G	-40 Cel					BOTTOM	R-PBGA-BU52	3	3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY				260			17 mm	20 ns	2.7
K9PDG08U5D-LCB00	Samsung	FLASH	COMMERCIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	8GX8	8G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V						SLC NAND TYPE		18 mm		3.3
K9HCG08U1D-ICB00	Samsung	FLASH	COMMERCIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	8GX8	8G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	12 mm		68719476736 bit	2.7 V						SLC NAND TYPE		17 mm		3.3
K9HBG08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified	34359738368 bit			2K					.0001 Amp		20 ns		NO
K9K8G08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	1GX8	1G	0 Cel					BOTTOM	R-PBGA-B52	2	3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH							17 mm	20 ns	2.7
K9F4G08U0A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM		1				Not Qualified	4294967296 bit			2K	e3				.00005 Amp		20 ns		NO
K9K4G08U1M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM		1				Not Qualified	4294967296 bit			2K	e3				.00005 Amp		30 ns		NO
K9HBG08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	4GX8	4G	0 Cel	16K	YES		YES	BOTTOM						Not Qualified	34359738368 bit			2K					.0001 Amp		20 ns		NO
K9HBG08U1M-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified	34359738368 bit			2K					.0001 Amp		20 ns		NO
K9K8G08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	2 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V		2K			260		.00005 Amp	17 mm	20 ns	2.7	NO
K9KAG08U1M-ICB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			4K					.001 Amp		20 ns
K9F4G08U0A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	2 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V		2K			260		.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U0M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		1				Not Qualified	4294967296 bit			2K					.00005 Amp		25 ns		NO
K9F4G08U1M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		1				Not Qualified	4294967296 bit			2K					.00005 Amp		25 ns		NO
K9F4G08U0A-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	2 mm	70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V		2K					.00005 Amp	17 mm	20 ns	2.7	NO
K9WBG08U1M-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified	34359738368 bit			4K					.0001 Amp		20 ns		NO
K9PDG08U5D-LIB00	Samsung	FLASH	INDUSTRIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V						SLC NAND TYPE		18 mm		3.3
K9WBG08U1M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM		3				Not Qualified	34359738368 bit			4K			260		.0001 Amp		20 ns		NO
K9F4G08U0B-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY			1 mm	85 Cel	512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V								17 mm	25 ns	3.3
K9K8G08U1B000000	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm		8589934592 bit	2.7 V								17 mm	25 ns	3.3
K9K8G08U1A-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM		3				Not Qualified	8589934592 bit			2K			260		.00005 Amp		25 ns		NO
K9F4G08U0B-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY			1 mm	70 Cel	512MX8	512M	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V								17 mm	25 ns	3.3
K9F2G08U0M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM		1				Not Qualified	2147483648 bit			2K	e3				.00005 Amp		30 ns		NO
K9K2G08U1A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM						Not Qualified	2147483648 bit			2K					.00005 Amp				NO
K9F8G08U0M-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	1073741824 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	1GX8	1G	0 Cel	4K	YES		YES	BOTTOM						Not Qualified	8589934592 bit			4K					.00005 Amp		20 ns		NO
K9WAG08U1B-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	2GX8	2G	0 Cel	16K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			2K					.0002 Amp		25 ns		NO
K9K8G08U1B-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY			1 mm	70 Cel	1GX8	1G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V								17 mm	25 ns	3.3
K9K4G08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K					.00005 Amp	17 mm	30 ns	2.7	NO
K9WAG08U1B-IIB00	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			2K					.0002 Amp		25 ns		NO
K9WAG08U1B-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified	17179869184 bit			2K					.0002 Amp		25 ns		NO
K9F2G08U0A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	17 mm	30 ns	1.8	NO
K9WAG08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		2K			260		.0001 Amp	17 mm	20 ns	2.7	NO
K9WAG08U1M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		70 Cel	2GX8	2G	0 Cel	16K	YES	MATTE TIN	YES	BOTTOM	R-XBGA-N52	1	3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		2K	e3				.0001 Amp	17 mm	25 ns	2.7	NO
K9F2G08U0A-ICB00	Samsung	FLASH	COMMERCIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel	256MX8	256M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	17 mm	30 ns	1.8	NO
K9K4G08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories	1 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K					.00005 Amp	17 mm	30 ns	2.7	NO
K9F2G08U0A-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		3				Not Qualified	2147483648 bit			2K			260		.00005 Amp		20 ns		NO
K9K2G08U1A-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel	256MX8	256M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U0A-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		3				Not Qualified	4294967296 bit			2K			260		.00005 Amp		25 ns		NO
K9KAG08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel	2GX8	2G	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.001 Amp	17 mm	20 ns	2.7
K9WAG08U1M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	16K	YES	MATTE TIN	YES	BOTTOM	R-XBGA-N52	1	3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		2K	e3				.0001 Amp	17 mm	25 ns	2.7	NO
K9K8G08U1A-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories	2 mm	70 Cel	1GX8	1G	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V		2K					.00005 Amp	17 mm	20 ns	2.7	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.