55 Flash Memory 838

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND256W3AACZA6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4A2AZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W4AABZA6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4AABZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND01GR4A2CZD6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY			.8 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B55	1.95 V	1.05 mm	8 mm	Not Qualified	1073741824 bit	1.7 V	ORGANIZED AS 264 PAGES OF 528 BYTES			SLC NAND TYPE		10 mm	15000 ns	1.8
NAND01GR4A2CZD6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY			.8 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B55	1.95 V	1.05 mm	8 mm	Not Qualified	1073741824 bit	1.7 V	ORGANIZED AS 264 PAGES OF 528 BYTES			SLC NAND TYPE		10 mm	15000 ns	1.8
NAND256W4AABZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W4AACZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND512R3A2DZD6F	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	536870912 bit			512		SLC NAND TYPE	.00005 Amp		30 ns		NO
NAND256W4A2AZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W4AACZA6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND01GW4A2CZD6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			16	GRID ARRAY			.8 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm	Not Qualified	1073741824 bit	2.7 V	ORGANIZED AS 264 PAGES OF 528 BYTES			SLC NAND TYPE		10 mm	12000 ns	3
NAND256W3AAAZA6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4AAAZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND01GR3A2CZD6E	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	1073741824 bit			512		SLC NAND TYPE	.00005 Amp		30 ns		NO
NAND256W3AABZA6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4A0CZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3A0BZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3A0AZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W4AACZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3A2CZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W4AAAZA6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND01GW3A2CZD6F	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	30 mA	134217728 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	1073741824 bit			512		SLC NAND TYPE	.00005 Amp		18 ns		NO
NAND256W3AABZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3AAAZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3A2BZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3A0CZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND01GW3A2CZD6E	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	30 mA	134217728 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	1073741824 bit			512		SLC NAND TYPE	.00005 Amp		18 ns		NO
NAND256W3A0AZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND512W3A2CZD6E	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	536870912 bit			512		SLC NAND TYPE	.00005 Amp		35 ns		NO
NAND256W3A2CZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND512W3A2DZD6F	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	536870912 bit			512		SLC NAND TYPE	.00005 Amp		18 ns		NO
NAND256W4AAAZA6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND512R4A2CZD6E	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B55	1.95 V	1.05 mm	8 mm	Not Qualified	536870912 bit	1.7 V				SLC NAND TYPE		10 mm	15000 ns	1.8
NAND256W3A0BZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3AAAZA6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4AACZA6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W3A0CZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND512W3A2CZD6F	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	536870912 bit			512		SLC NAND TYPE	.00005 Amp		35 ns		NO
NAND256W3A2AZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3AACZA6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4A0AZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3AAAZAXF	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND256W3AABZA6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V			e1	SLC NAND TYPE		10 mm	35 ns	3
NAND256W4A0CZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm		268435456 bit	2.7 V				SLC NAND TYPE		10 mm		3
NAND512W3A2DZD6E	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	536870912 bit			512		SLC NAND TYPE	.00005 Amp		18 ns		NO
NAND512R3A2CZD6F	Micron Technology	FLASH	INDUSTRIAL	55	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	15 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA55,8X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B55				Not Qualified	536870912 bit			512		SLC NAND TYPE	.00005 Amp		45 ns		NO
NAND01GW4A2CZD6F	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			16	GRID ARRAY			.8 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B55	3.6 V	1.05 mm	8 mm	Not Qualified	1073741824 bit	2.7 V	ORGANIZED AS 264 PAGES OF 528 BYTES			SLC NAND TYPE		10 mm	12000 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.