56 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
JS28F128P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
S29GL128S90TFI020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29GL512T10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V			e3		260			18.4 mm		100 ns	2.7
S29GL512T10TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V			e3		260			18.4 mm		100 ns	2.7
S29GL128S90TFI023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29GL01GT10TFI030	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V			e3					18.4 mm		100 ns	2.7
S29GL064S70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F128J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
S29GL064N90TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL064S70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				67108864 bit	2.7 V			e3		260			18.4 mm		70 ns	3
JS28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
S29GL256S90TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29GL256P90TFIR20	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL512S11TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			536870912 bit	2.7 V		16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	110 ns	2.7	YES
S29GL256P10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512P10TFIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			536870912 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29GL256P11TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL01GP11TFIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		1GX1	1G	-40 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			1073741824 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128P10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29GL256N10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
M29W256GL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
S29GL512T10GHI020	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm				536870912 bit	2.7 V								9 mm		100 ns	2.7
S29GL01GT10GHI020	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm				1073741824 bit	2.7 V								9 mm		100 ns	2.7
S29GL128P11TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL256S10TFIV20	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512P11TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			536870912 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL032N90TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
TE28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56						Not Qualified			134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
S29GL512S10TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512S10GHI020	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1			NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
MT28EW512ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V				30	260	NOR TYPE		18.4 mm		95 ns	3
S29GL256S10TFB020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512T10TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V			e3					18.4 mm		100 ns	2.7
JS28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			33554432 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
TE28F128J3D-75	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
S29GL01GS10TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512S11TFIV20	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128S10TFB023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES
S29GL256P11TFI013	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL512S11TFIV10	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
M58LW064D110N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
MT28EW128ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				134217728 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
MX29GL128FHT2I-70G	Macronix	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3			NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064S70TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29GL128S90TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29W128GL70N6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT28EW128ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm				134217728 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
S29GL512P11TFI020	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			536870912 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.