56 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F410-120N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56					Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M58WR032HB60ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M28F420-70XN1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	512KX8	512K	0 Cel					DUAL	R-PDSO-G56	5.25 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M29DW128G60NF6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	DUAL	R-PDSO-G56					Not Qualified	BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29DW128F60NF1	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES	TIN LEAD	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e0			NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M58CR064P10ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	TOP	67108864 bit	1.65 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	10 mm	YES	100 ns	1.8	NO
M58WR064FB80ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M29W128FL60N6F	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	256	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M28F420-70N1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	512KX8	512K	0 Cel					DUAL	R-PDSO-G56	5.5 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M58WR064HB70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M58WR032QT60ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56	2 V	1 mm		9 mm	Not Qualified	TOP	33554432 bit	1.7 V		4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	7.7 mm	YES	60 ns	1.8	NO
M29DW128G60NF6F	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	DUAL	R-PDSO-G56					Not Qualified	BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	60 ns		YES
M28F410-120XN3	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	125 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56					Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M28F420-60XN6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.000005 Amp			60 ns		NO
M28V410-120N1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	512KX8	512K	0 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		120 ns	12
M58CR064P10ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	TOP	67108864 bit	1.65 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	10 mm	YES	100 ns	1.8	NO
M28V410-150N1	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	512KX8	512K	0 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		150 ns	12
M28V410-180N1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	512KX8	512K	0 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		180 ns	12
M58WR032QB60ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56	2 V	1 mm		9 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	7.7 mm	YES	60 ns	1.8	NO
M58WR064FB70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M29W640GB90NB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M58CR064Q100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	BOTTOM	67108864 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10 mm	YES	14 ns	1.8	NO
M58WR064FT60ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M28F410-120N1	STMicroelectronics	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56					Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M58WR032HT70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	TOP	33554432 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M29W128FH70N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	256	YES		YES	DUAL	R-PDSO-G56					Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M28F420-80XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	R-PDSO-G56	5.25 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M58WR032FT70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M28F420-80XN1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	512KX8	512K	0 Cel					DUAL	R-PDSO-G56	5.25 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M29W128GH60N6F	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56					Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M58WR064T100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B56	2.2 V	1 mm		7.7 mm	Not Qualified	TOP	67108864 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	9 mm	YES	100 ns	1.8	NO
M58WR064FB60ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M58WR016QB80ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	1048576 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B56	2 V	1 mm		9 mm	Not Qualified	BOTTOM	16777216 bit	1.7 V		4	e0			NOR TYPE	.00005 Amp	7.7 mm	YES	80 ns	1.8	NO
M58WR128FB70ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M58CR064Q100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	BOTTOM	67108864 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10 mm	YES	14 ns	1.8	NO
M28F410-150N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56					Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
M28F420-100XN6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.000008 Amp			100 ns		NO
M29DW128F70NF6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN LEAD	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M58WR032FT80ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M58WR128FB70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M28V410-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		120 ns	12
M58WR032QB80ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B56	2 V	1 mm		9 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		4	e0			NOR TYPE	.000005 Amp	7.7 mm	YES	80 ns	1.8	NO
M58WR064FT80ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M58CR032C100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	2097152 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10 mm	YES	100 ns	1.8	NO
M28V420-180N6TR	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		180 ns	12
M29DW128F60NF6F	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M58WR064EB85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B56	2.2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.65 V						NOR TYPE		9 mm		85 ns	1.8
M28F420-80N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.000008 Amp			80 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.