56 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL032N90TFA023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL256P90TFIV23	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words		3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL032N11TFIV12	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words		3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8/16				NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL256S11TFV010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words		3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	105 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	HARDWARE/SOFTWARE	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				268435456 bit	2.7 V		16	e3			NOR TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL064S90TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words		3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8		20	.5 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	18.4 mm		90 ns	3	YES
S29GL256P90TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words		3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL512T11TFV040	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	2.7
S29GL512S13TFEV13	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words		3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100 Write/Erase Cycles	14 mm		.00006 ms		536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	18.4 mm	YES	130 ns	3	YES
S29GL01GS12TFE023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	67108864 words		3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	125 Cel	3-STATE	64MX16	64M	-55 Cel	1K	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100 Write/Erase Cycles	14 mm		.00006 ms		1073741824 bit	2.7 V		16				NOR TYPE	.0002 Amp	18.4 mm	YES	120 ns	3	YES
S29GL128S13TFEV23	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words		3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100 Write/Erase Cycles	14 mm		.00006 ms		134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	18.4 mm	YES	130 ns	3	YES
S29GL032N90TFI20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		2MX16	2M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			33554432 bit	2.7 V			e3					18.4 mm		90 ns	3
S29GL256S11TFIV20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	110 ns	2.7	YES
S29GL128S10TFI013	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		16	e3	30	260	NOR TYPE	.0001 Amp	18.4 mm	YES	100 ns	2.7	YES
S29GL512S110TFIV10	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms		536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL256S11TFIV23	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	256	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	110 ns	2.7	YES
S29GL256P11TACR20	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		256MX1	256M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	3 V						NOR TYPE		18.4 mm		110 ns	3
S29GL256S110TFIV10	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms		268435456 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL064N11TFAV73	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	3
S29GL032N90TFA032	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			TOP	33554432 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL128P90TFIR20	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words		3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL256S100TFIV20	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms		268435456 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL064S80TFIV23	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words		3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	3
S29GL01GT10TFI043	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	2.7
S29GL01GT11TFV013	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	2.7
S29GL256P90TFIV13	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words		3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL128P10TACR23	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	3 V						NOR TYPE		18.4 mm		100 ns	3
S29GL256S100TFI020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms		268435456 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL032M10TAIR2	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	2097152 words		3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			33554432 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	4/8	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29GL064S90TFVV23	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words		3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		8MX8	8M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL512T11TFB030	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1					NOR TYPE		18.4 mm		110 ns	2.7
S29GL064N11TFAV22	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	3
S29GL01GT10TFA040	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	2.7
S29GL01GT11TFBV40	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		1			.5 mm	105 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V								18.4 mm		110 ns	2.7
S29GL01GP11TFCR22	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			1073741824 words	COMMON	3.3	YES		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP56,.78,20			20	.5 mm	85 Cel	TOTEM POLE	1GX1	1G	0 Cel		YES		YES	DUAL	HARDWARE/SOFTWARE	R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	3 V							.000005 Amp	18.4 mm		110 ns	3	YES
S29GL512S110TFI023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms		536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL064N90TAIR10	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	3 V			e0			NOR TYPE		18.4 mm		90 ns	3
S29GL512S120TFIV10	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms		536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	120 ns	3	YES
S29GL032N11TAIV20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words		3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			33554432 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL064M90TFIR1	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words		3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	4/8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL512T10GHI040	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56		3.6 V	1 mm		7 mm			BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		9 mm		100 ns	2.7
S29GL256P10TAI013	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words		3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29GL256P13TFIV23	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V			e3			NOR TYPE		18.4 mm		110 ns	3
S29GL064N90TFA070	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL128P10TFIV23	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
S29GL512T12TFBV13	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	2.7
S29GL032N90TFA010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL256P11TAIV13	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words		3	YES	1.8/3.3,3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL512T11TFAV20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.