63 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND02GR3B2AZB6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified	2147483648 bit	1.7 V	2K	e1				.00005 Amp	12 mm	25000 ns	1.8	NO
NAND02GR4B3BZB1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX16	128M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified	2147483648 bit	1.7 V		e0					12 mm	35 ns	1.8
NAND01GW3B2AZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	128MX8	128M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified	1073741824 bit	2.7 V	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	12 mm	25000 ns	3	NO
NAND01GR4A2CZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY				85 Cel	64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	1073741824 bit	1.65 V		e1						15000 ns	1.8
NAND01GR3A2BZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY				70 Cel	128MX8	128M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	1073741824 bit	1.65 V		e0						15000 ns	1.8
NAND01GW3A2CZB1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX8	128M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9 mm	Not Qualified	1073741824 bit	2.7 V		e0			SLC NAND TYPE		11 mm	35 ns	3
NAND02GW4B2BZB1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX16	128M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9.5 mm	Not Qualified	2147483648 bit	2.7 V		e1					12 mm	25000 ns	3
NAND02GW4B2AZB6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	134217728 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9.5 mm	Not Qualified	2147483648 bit	2.7 V	1K	e0				.00005 Amp	12 mm	35 ns	3	NO
NAND01GR4A0BZB6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX16	64M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9 mm	Not Qualified	1073741824 bit	1.7 V		e0			SLC NAND TYPE		11 mm	35 ns	1.8
NAND256R3A3DZA1	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY				70 Cel	32MX8	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	268435456 bit	1.65 V		e0						15000 ns	1.8
NAND01GR3A1AZB1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	128MX8	128M	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	8.5 mm	Not Qualified	1073741824 bit	1.7 V	512	e0				.0001 Amp	15 mm	15000 ns	1.8	NO
NAND256W4A3CZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY				70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED				12000 ns	3
NAND01GR4A0DZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY				85 Cel	64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	1073741824 bit	1.65 V		e1						15000 ns	1.8
NAND08GR4B3BZB6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified	8589934592 bit	1.7 V		e1					12 mm	25000 ns	1.8
NAND512W4A0BZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9 mm	Not Qualified	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm	35 ns	3
NAND512W3A2CZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	64MX8	64M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9 mm	Not Qualified	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm	35 ns	3
NAND08GW4B3BZB6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9.5 mm	Not Qualified	8589934592 bit	2.7 V		e1					12 mm	25000 ns	3
NAND01GR4A2CZB6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX16	64M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9 mm	Not Qualified	1073741824 bit	1.7 V		e0			SLC NAND TYPE		11 mm	35 ns	1.8
NAND01GW3A0CZB1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX8	128M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9 mm	Not Qualified	1073741824 bit	2.7 V		e1			SLC NAND TYPE		11 mm	35 ns	3
NAND01GW3B2AZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified	1073741824 bit	2.7 V	2K	e0				.00005 Amp	12 mm	35 ns	3	NO
NAND01GR4A0CZB1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	64MX16	64M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9 mm	Not Qualified	1073741824 bit	1.7 V		e1			SLC NAND TYPE		11 mm	35 ns	1.8
NAND512W4A3CZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY				85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE			12000 ns	3
NAND01GR3A2AZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX8	128M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	8.5 mm	Not Qualified	1073741824 bit	1.7 V		e0					15 mm	15000 ns	1.8
NAND01GW3A2BZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY				70 Cel	128MX8	128M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED				12000 ns	3
NAND01GR3A2AZB1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	128MX8	128M	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9 mm	Not Qualified	1073741824 bit	1.7 V	512	e0			SLC NAND TYPE	.0001 Amp	11 mm	35 ns	1.8	NO
NAND512W4B2AZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	33554432 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	512	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified	536870912 bit	2.7 V	1K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	12 mm	25000 ns	3	NO
NAND128R4A3DZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY				85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	134217728 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED				15000 ns	1.8
NAND01GW3A2DZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY				85 Cel	128MX8	128M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	1073741824 bit	2.7 V		e0						12000 ns	3
NAND01GW3B2BZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9 mm	Not Qualified	1073741824 bit	2.7 V	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	11 mm	25000 ns	3	NO
NAND01GR4B2CZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	64MX16	64M	0 Cel					BOTTOM	R-PBGA-B63	1.95 V	1.05 mm	9.5 mm	Not Qualified	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			12 mm	25000 ns	1.8
NAND08GW3B2AZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	3	NO	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	1GX8	1G	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.4 mm	8.5 mm	Not Qualified	8589934592 bit	2.7 V	2K	e0				.00005 Amp	15 mm	35 ns	3	NO
NAND01GR3A3AZB1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	128MX8	128M	0 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	8.5 mm	Not Qualified	1073741824 bit	1.7 V	512	e1				.0001 Amp	15 mm	15000 ns	1.8	NO
NAND01GR3A1BZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY				85 Cel	128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	1073741824 bit	1.65 V		e1						15000 ns	1.8
NAND01GR4A3DZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY				85 Cel	64MX16	64M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	1073741824 bit	1.65 V		e0						15000 ns	1.8
NAND512R3A3AZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.05 mm	8.5 mm	Not Qualified	536870912 bit	1.7 V	512		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15 mm	15000 ns	1.8	NO
NAND512W4A3BZA1	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY				70 Cel	32MX16	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	536870912 bit	2.7 V		e0			SLC NAND TYPE			12000 ns	3
NAND01GW3B3CZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX8	128M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified	1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			12 mm	35 ns	3
NAND01GW3A3AZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	134217728 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	128MX8	128M	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	8.5 mm	Not Qualified	1073741824 bit	2.7 V	512	e0				.0001 Amp	15 mm	12000 ns	3	NO
NAND08GR4B3BZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm	8.5 mm	Not Qualified	8589934592 bit	1.7 V		e1					15 mm	35 ns	1.8
NAND02GR3B3BZB6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	256MX8	256M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified	2147483648 bit	1.7 V		e0					12 mm	35 ns	1.8
NAND512R3A1AZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	64MX8	64M	0 Cel	4K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	1.95 V	1.05 mm	8.5 mm	Not Qualified	536870912 bit	1.7 V	512	e0				.00005 Amp	15 mm	15000 ns	1.8	NO
NAND512R4A3DZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY				85 Cel	32MX16	32M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	536870912 bit	1.65 V		e0			SLC NAND TYPE			15000 ns	1.8
NAND01GR3A0AZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	8.5 mm	Not Qualified	1073741824 bit	1.7 V		e0					15 mm	15000 ns	1.8
NAND01GR3A1AZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	128MX8	128M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	8.5 mm	Not Qualified	1073741824 bit	1.7 V		e0					15 mm	15000 ns	1.8
NAND128R3A3DZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY				85 Cel	16MX8	16M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified	134217728 bit	1.65 V		e0						15000 ns	1.8
NAND128W3A3CZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	GRID ARRAY				85 Cel	16MX8	16M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED				12000 ns	3
NAND01GW4A0DZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY				85 Cel	64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	1073741824 bit	2.7 V		e1						12000 ns	3
NAND01GW3A0CZA1	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY				70 Cel	128MX8	128M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified	1073741824 bit	2.7 V								12000 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.