63 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F2G08ABAEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V	2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns	2.7	NO
S34ML01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V	2K			260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
S34ML16G202BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			9 mm				17179869184 bit	2.7 V				260	SLC NAND TYPE		11 mm		3
MX30LF2G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		3
MT29F4G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V	2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns		NO
MT29F8G08ABACAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			8589934592 bit	2.7 V	4K				SLC NAND TYPE	.0001 Amp	11 mm			NO
S34MS16G202BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH		4			.8 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	1.95 V	1.2 mm			9 mm				17179869184 bit	1.7 V				260	SLC NAND TYPE		11 mm		1.8
MT29F2G08ABAEAH4-IT:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				2147483648 bit	2.7 V		e1	30	260	SLC NAND TYPE		11 mm		2.7
MT29F8G08ABBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified			8589934592 bit		4K				SLC NAND TYPE	.00005 Amp		30 ns	1.8	NO
S34MS01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm				1073741824 bit	1.7 V				260	SLC NAND TYPE		11 mm		1.8
S34ML02G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V	2K			260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
MT29F1G08ABAFAH4-ITE:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		3.3
MT29F8G08ADADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	8589934592 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			68719476736 bit	2.7 V	2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns	3.3	NO
MT29F1G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V	2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns	3.3	NO
MT29F4G01AAADDHC-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	4294967296 words	3.3		3/3.3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	85 Cel		4GX1	4G	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	10.5 mm	Not Qualified	SPI		4294967296 bit	2.7 V		e1	30	260	SLC NAND TYPE	.00005 Amp	13 mm		3.3
MT29F4G08ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V	2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns		NO
S34ML02G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V	2K			260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
MT29F2G08ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V	2K	e1			SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MX30LF1G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			131072 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128KX8	128K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1048576 bit	2.7 V		e1			SLC NAND TYPE		11 mm		3
MT29F16G08ADBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		2GX8	2G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified			17179869184 bit		4K				SLC NAND TYPE	.00005 Amp		30 ns	1.8	NO
MT29F4G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V	2K	e1	30	260	SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G08ABBEAH4-ITX:E	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32				.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	1.7 V	2K				SLC NAND TYPE	.00005 Amp	11 mm		1.8	YES
MT29F4G08ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V	2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F4G16ABADAH4-AIT:D	Micron Technology	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY						85 Cel		256MX16	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63										4294967296 bit			e1	30	260	SLC NAND TYPE				3.3
MT29F8G08ADADAH4-IT:DTR	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles		9 mm				8589934592 bit	2.7 V	2K				SLC NAND TYPE	.0001 Amp	11 mm		3.3	NO
MT29F1G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V	2K	e1			SLC NAND TYPE	.0001 Amp	11 mm	25 ns	3.3	NO
MT29F2G08ABAEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm	25 ns	2.7	NO
S34MS01G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V	2K			260	SLC NAND TYPE	.00005 Amp	11 mm	45 ns	1.8	NO
MT29F4G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V	2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns		NO
MT29F4G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V	2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F4G08ABADAH4-AITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				4294967296 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
MT29F4G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63							Not Qualified			4294967296 bit		2K	e1	30	260	SLC NAND TYPE	.0001 Amp		25 ns		NO
MT29F4G01AAADDHC:D	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	70 Cel		512MX8	512M	0 Cel					BOTTOM	HARDWARE	R-PBGA-B63				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4294967296 bit						SLC NAND TYPE	.00005 Amp
MT29F16G08ADBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified			17179869184 bit		4K				SLC NAND TYPE	.00005 Amp		30 ns	1.8	NO
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
W29N01HZBINA	Winbond Electronics	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
MT29F2G08ABAEAWP-AATX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP48,.8,20		Flash Memories		.8 mm	105 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V	2K	e3	30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns	3.3	NO
MT29F2G16ABBEAHC-AIT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V	1K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F8G08ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V	2K	e1			SLC NAND TYPE	.00005 Amp	11 mm	25 ns		NO
MT29F8G16ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V	1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns		NO
NAND512W3A2BZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1.05 mm			9 mm	Not Qualified			536870912 bit	2.7 V	512		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	11 mm	12000 ns	3	NO
NAND512W3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM		R-PBGA-B63		3.6 V	1.05 mm			9 mm	Not Qualified			536870912 bit	2.7 V	512	e2	30	260	SLC NAND TYPE	.00005 Amp	11 mm	35 ns	3	NO
S29JL064H90BAI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			11 mm			BOTTOM/TOP	67108864 bit	2.7 V		e0		260	NOR TYPE		12 mm	90 ns	3
S34ML04G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V	2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
S34MS08G201BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm				8589934592 bit	1.7 V				260	SLC NAND TYPE		11 mm		1.8
IS34ML01G081-BLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm				1073741824 bit	2.7 V		e1	10	260	SLC NAND TYPE		11 mm		3.3
MT29F1G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1073741824 bit	2.7 V					SLC NAND TYPE		11 mm		2.7
MT29F2G16ABBEAHC-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V	1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.