63 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W640DT70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE		11 mm		70 ns	3
M29W640DB90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW640D90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W641DU10ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	3 V						NOR TYPE		11 mm		100 ns	3
M29W320DB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW324DT90ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		11 mm		90 ns	3
M29W320DT90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W640DT90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W320DB90ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W320DT90ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		11 mm		90 ns	3
M29W641DU70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified		67108864 bit	3 V			e0			NOR TYPE		11 mm		70 ns	3
M29W641DU10ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3.3	YES	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	3 V			e0			NOR TYPE	.0001 Amp	11 mm	YES	100 ns	3	YES
M29W640DB70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		11 mm		70 ns	3
M29DW640D90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W641DU12ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V			e0			NOR TYPE	.0001 Amp	11 mm	YES	120 ns	3	YES
M29W641DU90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W640DT90ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		11 mm		90 ns	3
M29DW323DT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW324DT90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		11 mm		90 ns	3
M29DW324DT70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW640D70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	4194304 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
NAND01GW4B3AZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified		1073741824 bit	2.7 V		1K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	12 mm		35 ns	3	NO
NAND512W4A0DZA1	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY					70 Cel	32MX16	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified		536870912 bit	2.7 V			e0			SLC NAND TYPE				12000 ns	3
NAND256W4A3DZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY					70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified		268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED					12000 ns	3
NAND01GR4A2BZB1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	64MX16	64M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9 mm	Not Qualified		1073741824 bit	1.7 V			e0			SLC NAND TYPE		11 mm		35 ns	1.8
NAND02GW3B2CZB6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9.5 mm	Not Qualified		2147483648 bit	2.7 V			e1					12 mm		25000 ns	3
NAND512W3B3BZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified		536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			12 mm		35 ns	3
NAND01GR4B2AZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	15 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.05 mm	9.5 mm	Not Qualified		1073741824 bit	1.7 V		1K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	12 mm		25000 ns	1.8	NO
NAND02GW3B3BZB1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	256MX8	256M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9.5 mm	Not Qualified		2147483648 bit	2.7 V			e1					12 mm		35 ns	3
NAND512W4B3BZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified		536870912 bit	2.7 V			e0					12 mm		35 ns	3
NAND02GR3B2BZB1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	256MX8	256M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified		2147483648 bit	1.7 V			e0					12 mm		35 ns	1.8
NAND128R3A3DZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY					85 Cel	16MX8	16M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		134217728 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED					15000 ns	1.8
NAND01GR4A0DZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY					70 Cel	64MX16	64M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		1073741824 bit	1.65 V			e0							15000 ns	1.8
NAND256R3A3DZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY					85 Cel	32MX8	32M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		268435456 bit	1.65 V			e0							15000 ns	1.8
NAND01GR3A3AZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	8.5 mm	Not Qualified		1073741824 bit	1.7 V			e1	30	260			15 mm		15000 ns	1.8
NAND01GR3A2DZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY					85 Cel	128MX8	128M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		1073741824 bit	1.65 V			e0							15000 ns	1.8
NAND512W3B3BZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	64MX8	64M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.05 mm	9.5 mm	Not Qualified		536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			12 mm		35 ns	3
NAND512R4A3BZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY					85 Cel	32MX16	32M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		536870912 bit	1.65 V			e0			SLC NAND TYPE				15000 ns	1.8
NAND128W3A3BZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	GRID ARRAY					85 Cel	16MX8	16M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified		134217728 bit	2.7 V			e0							12000 ns	3
NAND256W3A3CZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY					85 Cel	32MX8	32M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified		268435456 bit	2.7 V			e0							12000 ns	3
NAND256W3A1DZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			8	GRID ARRAY					85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V			Not Qualified		268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED					12000 ns	3
NAND08GW3B2CZB1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	1GX8	1G	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	9.5 mm	Not Qualified		8589934592 bit	2.7 V			e0					12 mm		25000 ns	3
NAND08GW3B2CZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	2.7 V			e0					15 mm		35 ns	3
NAND02GR4B3BZB1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	128MX16	128M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified		2147483648 bit	1.7 V			e1					12 mm		35 ns	1.8
NAND01GR4A2DZA1	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY					70 Cel	64MX16	64M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		1073741824 bit	1.65 V			e0							15000 ns	1.8
NAND01GR4A2BZB1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	64MX16	64M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9 mm	Not Qualified		1073741824 bit	1.7 V			e1			SLC NAND TYPE		11 mm		35 ns	1.8
NAND02GR3B2CZB6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.2 mm	9.5 mm	Not Qualified		2147483648 bit	1.7 V			e1					12 mm		25000 ns	1.8
NAND128R3A3BZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY					85 Cel	16MX8	16M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V			Not Qualified		134217728 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED					15000 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.