63 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W320DB70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		70 ns	3
M29W320DB70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W641DU90ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		11 mm		90 ns	3
M29DW323DB70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W641DU10ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	3 V					NOR TYPE		11 mm		100 ns	3
M29W640DB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W640DB70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		70 ns	3
M29W320DB90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		90 ns	3
M29W641DU70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified		67108864 bit	3 V		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW324DB90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W641DU70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified		67108864 bit	3 V		e1			NOR TYPE		11 mm		70 ns	3
M29DW324DB70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		70 ns	3
M29DW640D90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE		11 mm		90 ns	3
M29W320DB70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W640DB90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W320DT70ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	3 V	TOP BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W640DT70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW323DT70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W320DT90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e1			NOR TYPE		11 mm		90 ns	3
M29W640DB90ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE		11 mm		90 ns	3
M29DW323DT70ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW324DT90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W320DT90ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW324DB90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		90 ns	3
M29DW640D90ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE		11 mm		90 ns	3
M29DW324DB70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE		11 mm		70 ns	3
M29DW323DB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW323DT90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW323DT90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e1			NOR TYPE		11 mm		90 ns	3
M29W640DT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W641DU90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W641DU12ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	11 mm	YES	120 ns	3	YES
M29W320DT70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	3 V	TOP BOOT BLOCK	e1			NOR TYPE		11 mm		70 ns	3
M29DW323DT70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W640DB90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE		11 mm		90 ns	3
M29DW324DB70ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE		11 mm		70 ns	3
M29DW323DB90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW323DB70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW324DT90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK				NOR TYPE		11 mm		90 ns	3
M29W641DU70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified		67108864 bit	3 V		e1			NOR TYPE		11 mm		70 ns	3
M29W640DB70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		70 ns	3
M29DW323DB90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		11 mm		90 ns	3
M29DW324DB90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK				NOR TYPE		11 mm		90 ns	3
M29W641DU90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW323DT90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W641DU90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		11 mm		90 ns	3
M29W641DU90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		11 mm		90 ns	3
M29W641DU70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified		67108864 bit	3 V		e1			NOR TYPE		11 mm		70 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.