63 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F4G01AAADDHC-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			4294967296 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	4GX1	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	10.5 mm				4294967296 bit	2.7 V			e1			SLC NAND TYPE		13 mm			3.3
NAND512W3A2DZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY						85 Cel	64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V					Not Qualified			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE				12000 ns	3
MT29F4G01AAADDHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	85 Cel	512MX8	512M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B63				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4294967296 bit					30	260	SLC NAND TYPE	.00005 Amp
MT29F1G08ABBFAH4-ITE:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT29F4G16ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
S34ML04G104BHV013	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel	256MX16	256M	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm				4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
MT29F2G08ABAEAH4-ITX:E	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	268435456 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified			2147483648 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns		NO
MT29F4G08ABBDAHC-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	512MX8	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				4294967296 bit	1.7 V			e1	30	260	SLC NAND TYPE		13 mm			1.8
MT29F1G01AAADDH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm				1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm			2.7
MT29F1G01AAADDH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm				1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MT29F1G08ABCHCET:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F4G08ABBDAH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	512MX8	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				4294967296 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT29F4G16ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX16	256M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
S34ML04G104BHI010	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	268435456 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML16G202BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel	2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			9 mm				17179869184 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
MT29F1G01AAADDH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm				1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MT29F1G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	HARDWARE	R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm			1.8	NO
MT29F2G08ABAEAH4-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm			3.3
MT29F2G08ABBEAHC-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F4G08ABBFAH4-IT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	536870912 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA63,10X12,32			10	.8 mm	85 Cel	512MX8	512M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				4294967296 bit	1.7 V		4K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm				NO
MT29F8G08ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel	1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm				NO
S34ML04G100BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
K9F1208U0B-JIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3						Not Qualified			536870912 bit			512					.00005 Amp			30 ns		NO
MT29F16G08ADACAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F1G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F1G16ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F2G16ABBEAH4-AAT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel	128MX16	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				2147483648 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F4G08ABBFAH4-AIT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	536870912 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA63,10X12,32			10	.8 mm	85 Cel	512MX8	512M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				4294967296 bit	1.7 V		4K				SLC NAND TYPE	.00005 Amp	11 mm				NO
MT29F4G16ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel	256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
NAND512R3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel	64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm				536870912 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
S34ML01G100BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML04G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML04G104BHV010	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel	256MX16	256M	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm				4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S34ML04G200BHV003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel	512MX8	512M	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm				4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S34MS04G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
M29W320DB90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W320DT70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel	2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		TOP	33554432 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W640DT90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW324DB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W320DT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		TOP	33554432 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W320DB90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29DW323DB70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29DW640D70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	4194304 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W641DU10ZA1F	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	3 V						NOR TYPE		11 mm		100 ns	3
M29W641DU12ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11 mm		120 ns	3
M29W640DB90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.