Micron Technology - NAND512R3A2SZA6E

NAND512R3A2SZA6E by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number NAND512R3A2SZA6E
Description FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 536870912 bit;
Datasheet NAND512R3A2SZA6E Datasheet
In Stock1,441
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 64MX8
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Seated Height: 1.05 mm
Programming Voltage (V): 1.8
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals: 63
No. of Words: 67108864 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B63
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: TFBGA
Width: 9 mm
Memory Density: 536870912 bit
Memory IC Type: FLASH
JESD-609 Code: e1
Minimum Operating Temperature: -40 Cel
Memory Width: 8
No. of Functions: 1
Type: SLC NAND TYPE
Length: 11 mm
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.8
Peak Reflow Temperature (C): 260
Parallel or Serial: PARALLEL
Terminal Pitch: .8 mm
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 1.95 V
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