64 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL256P10FAIV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	2.7 V						NOR TYPE		13 mm		100 ns	3
S29GL128P90FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			134217728 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
S29GL128P90FAI012	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			134217728 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
S29GL128S12FHE013	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	11 mm		.00006 ms		134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29GL256P90FFIR22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL064N90DFA030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm			TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		90 ns	3
S29GL064N90FAI33	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			67108864 bit	2.7 V			e0			NOR TYPE		13 mm		90 ns	3
S29GL256S12DAE023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	16MX16	16M	-55 Cel	256	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	9 mm		.00006 ms		268435456 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL512S100DHI020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		.00006 ms		536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL064N11DFAV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		110 ns	3
S29GL512T10FHA030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		13 mm		100 ns	2.7
S29GL256S13FAEV23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	16MX16	16M	-55 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	11 mm		.00006 ms		268435456 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	130 ns	3	YES
S29GL256P11FFCR12	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		256MX1	256M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V						NOR TYPE		13 mm		110 ns	3
S29GL01GR11DFCR23	Infineon Technologies	FLASH	OTHER	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	0 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm				1073741824 bit	3 V						NOR TYPE		9 mm		110 ns	3
S29GL01GS12DHE010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	67108864 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	64MX16	64M	-55 Cel	1K	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	9 mm		.00006 ms		1073741824 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL01GT12DHN040	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm			BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		9 mm		120 ns	2.7
S29GL256S13FHEV13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	16MX16	16M	-55 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	11 mm		.00006 ms		268435456 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	130 ns	3	YES
S29GL01GS110DHI010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		.00006 ms		1073741824 bit	2.7 V		32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL01GT10FHI040	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm				1073741824 bit	2.7 V								13 mm		100 ns	2.7
S29GL01GT11FHB030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				1073741824 bit	2.7 V	CAN ALSO ORGANISED AS 1GX1					NOR TYPE		13 mm		110 ns	2.7
S29GL01GT11FHBV43	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				1073741824 bit	2.7 V								13 mm		110 ns	2.7
S29GL01GT12FHVV13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				1073741824 bit	2.7 V						NOR TYPE		13 mm		120 ns	2.7
S29GL512S110DHI023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		.00006 ms		536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL01GT10DHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm				1073741824 bit	2.7 V								9 mm		100 ns	2.7
S29GL512T11FHBV30	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				536870912 bit	2.7 V								13 mm		110 ns	2.7
S29GL512S13FHEV10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	11 mm		.00006 ms		536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	130 ns	3	YES
S29GL256P90FFI013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
S29GL032N90FFI23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			33554432 bit	2.7 V			e1					13 mm		90 ns	3
S29GL128P12FFI012	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			134217728 bit	2.7 V			e1			NOR TYPE		13 mm		110 ns	3
S29GL01GT11DHIV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm				1073741824 bit	2.7 V								9 mm		110 ns	2.7
S29GL032N90FFI023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL064N90FAIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			67108864 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL512T11FHA013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, LOW PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				536870912 bit	2.7 V								13 mm		110 ns	2.7
S29GL512T11DHV013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm				536870912 bit	2.7 V								9 mm		110 ns	2.7
S29GL064N90FAIR12	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			67108864 bit	3 V			e0			NOR TYPE		13 mm		90 ns	3
S29GL256S13FHEV10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	16MX16	16M	-55 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	11 mm		.00006 ms		268435456 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	130 ns	3	YES
AMD29DL161DT70PCI	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	70 ns		YES
S29GL512T11FHIV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm				536870912 bit	2.7 V			e1	30	260			13 mm		110 ns	2.7
S29GL128S13FHEV20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles	11 mm		.00006 ms		134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	130 ns	3	YES
S29GL01GT12FHBV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		13 mm		120 ns	2.7
S29GL01GT12FHBV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		13 mm		120 ns	2.7
S29GL128P12FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			134217728 bit	2.7 V			e1			NOR TYPE		13 mm		110 ns	3
S29GL01GT10DHA023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm				1073741824 bit	2.7 V	CAN ALSO ORGANISED AS 1GX1							9 mm		100 ns	2.7
S29GL128S10DHVV20	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	80 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	105 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3					Not Qualified			134217728 bit			16	e1	30	260	NOR TYPE	.0002 Amp		YES	100 ns		YES
S29GL512T12FHVV33	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		13 mm		120 ns	2.7
S29GL01GT10FAI033	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		13 mm		100 ns	2.7
S29GL256P12FAI022	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	2.7 V			e0			NOR TYPE		13 mm		110 ns	3
S29GL032N90FAIR40	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		2MX16	2M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	3 V			e0			NOR TYPE		13 mm		90 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.