64 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL064N11FFIS23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11DFIS12	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		67108864 bit	1.65 V					NOR TYPE		9 mm		110 ns	3	NO
S29GL064N11FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		33554432 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		67108864 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90DFIS12	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		33554432 bit	2.7 V					NOR TYPE		9 mm		90 ns	3	NO
S29GL064N90FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		67108864 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		67108864 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11DFIS22	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		67108864 bit	1.65 V					NOR TYPE		9 mm		110 ns	3	NO
S29GL032N11FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11DFIS22	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		33554432 bit	1.65 V					NOR TYPE		9 mm		110 ns	3	NO
S29GL064N90DFIS13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		67108864 bit	2.7 V					NOR TYPE		9 mm		90 ns	3	NO
S29GL032N11FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		33554432 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	10 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		33554432 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11DFIS23	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		67108864 bit	1.65 V					NOR TYPE		9 mm		110 ns	3	NO
S29GL064N90DFIS22	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		67108864 bit	2.7 V					NOR TYPE		9 mm		90 ns	3	NO
S29GL032N90DFIS23	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	9 mm		33554432 bit	2.7 V					NOR TYPE		9 mm		90 ns	3	NO
S29GL032N90FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		33554432 bit	2.7 V					NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		33554432 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		67108864 bit	1.65 V					NOR TYPE		13 mm		110 ns	3	NO
S29GL256N11FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL256N90FFIR10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	3 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL256N90FAIR20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	3 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL128N10FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	134217728 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL512N11FFI022	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	536870912 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL256N11FFI013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL512N11FAI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	536870912 bit	2.7 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL512N11FFIV13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	536870912 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL512N11FAI022	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	536870912 bit	2.7 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL128N90FFIR20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	134217728 bit	3 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL256N90FAIR10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	3 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL512N10FAI023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	536870912 bit	2.7 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL256N10FAI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	2.7 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL128N11FFIV12	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	134217728 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL256N90FAIR22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	268435456 bit	3 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL512N11FAIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	536870912 bit	2.7 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL128N11FFI022	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	134217728 bit	2.7 V	8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL128N11FAI022	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	134217728 bit	2.7 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL128N90FAIR13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified	134217728 bit	3 V	8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.