64 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL01GP11FAIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1GX1	1G	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		1073741824 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL032N90FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064A11FFIR40	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm		BOTTOM	67108864 bit	3 V			e1	40	260	NOR TYPE		13 mm		110 ns	3
S29GL064N11FFIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL064S70FHI030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	8,127			YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		TOP	67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	13 mm		70 ns	3	YES
S29GL064S80DHV020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		80 ns	3	YES
S29GL128N90FFIR10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		134217728 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL128S11DHIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm	Not Qualified		134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
S29GL512P10FFCR10	Cypress Semiconductor	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	0 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		536870912 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL512P11FAI022	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		536870912 bit	2.7 V		8/16	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL512S10DHA020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512S10DHI023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512T10FHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V			e1	30	260			13 mm		100 ns	2.7
S29GL512T11DHB013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm			536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1							9 mm		110 ns	2.7
S29GL512T11FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V			e1	30	260			13 mm		110 ns	2.7
S70GL02GS12FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified	BOTTOM/TOP	2147483648 bit	2.7 V		16/32				NOR TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S70GL02GT12FHBV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V		16/32				NOR TYPE	.0004 Amp	13 mm	Y	120 ns	3	YES
XCF128XFT64C	Xilinx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	2 V	1.2 mm		10 mm	Not Qualified		134217728 bit	1.7 V	ASYNCHRONOUS READ MODE	4	e0	30	225	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
M28W320FSB90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	33554432 bit				e0			NOR TYPE	.000005 Amp		YES	90 ns		NO
M29W128FL70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W320FSB10ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W320FST90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64						Not Qualified	TOP	33554432 bit							NOR TYPE	.000005 Amp		YES	90 ns		NO
M29DW128F70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29DW128F60ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories		1 mm	70 Cel		8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M30LW128D110ZA6	STMicroelectronics	FLASH MODULE	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00008 Amp	13 mm	YES	110 ns	3.3	NO
M28W640FST70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GH70ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W320FSU70ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	70 Cel		2MX16	2M	0 Cel	32	YES	TIN LEAD		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GT60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W640GB90ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M28W320FSU70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	70 Cel		2MX16	2M	0 Cel	32	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29DW128F70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories		1 mm	70 Cel		8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		30	240	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W320FST10ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64						Not Qualified	TOP	33554432 bit							NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W320FSB85ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000005 Amp		YES	85 ns		NO
M29W128FL60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29W640GH60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29DW128F60ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories		1 mm	70 Cel		8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		30	240	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W128GH60ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M28W320FSB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GB60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29DW128G70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W320FST90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64						Not Qualified	TOP	33554432 bit				e0			NOR TYPE	.000005 Amp		YES	90 ns		NO
M29W128FL70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W640FST70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W128GL90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M28W640FSB10ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	67108864 bit				e0			NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W640FSB85ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	67108864 bit				e0			NOR TYPE	.000005 Amp		YES	85 ns		NO
M29W640GT60ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.