67 Flash Memory 127

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Length	Programming Voltage (V)
TH58BYG3S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1073741824 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	1GX8	1G	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	8589934592 bit	1.7 V				8 mm	1.8
S34ML02G200GHA000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML01G200GHA010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS04G204GHI003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	268435456 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX16	256M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	4294967296 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34MS01G204GHI010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G200GHA003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS04G200GHI003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	536870912 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	512MX8	512M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	4294967296 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML01G204GHA000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34MS01G200GHA003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G200GHI010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML01G204GHI003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34ML01G200GHV003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML02G204GHI000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX16	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34MS01G204GHA010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G200GHB010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML01G200GHA003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML02G200GHA010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML01G200GHB010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS02G204GHI000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX16	128M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	2147483648 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G204GHI013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX16	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34MS01G204GHV000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML04G204GHI013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX16	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	4294967296 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34MS01G204GHA003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34MS01G204GHI003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML01G200GHB013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS01G204GHA000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML01G204GHA013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34ML01G204GHA010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34ML02G200GHA013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS01G204GHV003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G204GHI010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX16	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34ML02G200GHB003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML01G204GHA003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34MS01G204GHA013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML04G200GHI010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	536870912 words	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	512MX8	512M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	4294967296 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34ML01G200GHV013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS02G204GHI010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX16	128M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	2147483648 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML01G200GHA013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS01G204GHB000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G200GHB013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS01G200GHA000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34MS01G204GHV010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34MS01G204GHB013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	64MX16	64M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	1073741824 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML04G200GHI013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	536870912 words	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	512MX8	512M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	4294967296 bit	2.7 V			SLC NAND TYPE	8 mm	3
S34ML02G200GHB000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34MS02G204GHI013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	134217728 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	85 Cel	128MX16	128M	-40 Cel	BOTTOM	R-PBGA-B67	1.95 V	1 mm	6.5 mm	2147483648 bit	1.7 V			SLC NAND TYPE	8 mm	1.8
S34ML02G200GHV013	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	268435456 words	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	256MX8	256M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	2147483648 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3
S34ML01G200GHB000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.8 mm	105 Cel	128MX8	128M	-40 Cel	BOTTOM	R-PBGA-B67	3.6 V	1 mm	6.5 mm	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.