67 Flash Memory 127

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
KFG1216Q2B-SEB6	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	536870912 bit			1K	e3			SLC NAND TYPE	.00005 Amp		11 ns		NO
KFG5616U1A-DIB50	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	40 mA	16777216 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3	3.6 V	1 mm	7 mm	Not Qualified	268435456 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE	512	e1		260	SLC NAND TYPE	.00008 Amp	9 mm	76 ns	2.7	NO
KFG1216Q2B-SEB60	Samsung	FLASH	COMMERCIAL EXTENDED	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B67		1.95 V	1 mm	7 mm	Not Qualified	536870912 bit	1.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	9 mm	76 ns	1.8	NO
KFG5616Q1A-DEB5T	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	262144 bit			512	e3			SLC NAND TYPE	.00005 Amp		14.5 ns		NO
KFG2816D1M-DEB00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm	7 mm	Not Qualified	134217728 bit	2.4 V								9 mm	76 ns	2.7
KFG1216U2B-SIB6T	Samsung	FLASH	INDUSTRIAL	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	33554432 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3				Not Qualified	536870912 bit			1K	e1		260	SLC NAND TYPE	.00008 Amp		11 ns		NO
KFG5616U1A-DIB5T	Samsung	FLASH	INDUSTRIAL	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3				Not Qualified	262144 bit			512	e1		260	SLC NAND TYPE	.00008 Amp		14.5 ns		NO
KFG1216Q2B-SEB80	Samsung	FLASH	COMMERCIAL EXTENDED	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3	1.95 V	1 mm	7 mm	Not Qualified	536870912 bit	1.7 V		1K	e1		260	SLC NAND TYPE	.00005 Amp	9 mm	76 ns	1.8	NO
KFG5616U1A-DIB60	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B67	2	3.6 V	1 mm	7 mm	Not Qualified	268435456 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					9 mm	76 ns	2.7
KFG2816D1M-DEB000	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm	7 mm	Not Qualified	134217728 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							9 mm	76 ns	2.7
KFG5616Q1A-DEB60	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B67	2	1.95 V	1 mm	7 mm	Not Qualified	268435456 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					9 mm	76 ns	1.8
KFG5616Q1A-DEB5	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	262144 bit			512	e3			SLC NAND TYPE	.00005 Amp		14.5 ns		NO
KFG1216Q2B-SEB8	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3				Not Qualified	536870912 bit			1K	e1		260	SLC NAND TYPE	.00005 Amp		9 ns		NO
KFG2816Q1M-DEB000	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-30 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm	7 mm	Not Qualified	134217728 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							9 mm	76 ns	1.8
KFG1216U2B-SIB60	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	35 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3	3.6 V	1 mm	7 mm	Not Qualified	536870912 bit	2.7 V		1K	e1		260	SLC NAND TYPE	.00008 Amp	9 mm	76 ns	2.7	NO
KFM5616Q1A-DEB50	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	40 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	2	1.95 V	1 mm	7 mm	Not Qualified	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	512	e1			SLC NAND TYPE	.00005 Amp	9 mm	76 ns	1.8	NO
KFG5616D1M-DED00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm	9.5 mm	Not Qualified	268435456 bit	2.4 V								12 mm	76 ns	2.7
KFG5616D1A-DEB60	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm	7 mm	Not Qualified	268435456 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							9 mm	76 ns	2.7
KFG1216U2B-SIB6	Samsung	FLASH	INDUSTRIAL	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	35 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3				Not Qualified	536870912 bit			1K	e1		260	SLC NAND TYPE	.00008 Amp		70 ns		NO
KFG2816Q1M-DED00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-30 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm	7 mm	Not Qualified	134217728 bit	1.7 V								9 mm	76 ns	1.8
KFG5616D1A-DEB50	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm	7 mm	Not Qualified	268435456 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							9 mm	76 ns	2.7
KFG2816Q1M-DEB00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	25 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3	1.95 V	1 mm	7 mm	Not Qualified	134217728 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE	512	e1		260		.00005 Amp	9 mm	76 ns	1.8	NO
KFG2816U1M-DID00	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm	7 mm	Not Qualified	134217728 bit	2.7 V								9 mm	76 ns	2.7
KFG5616U1A-DIB5	Samsung	FLASH	INDUSTRIAL	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified	262144 bit			512	e3			SLC NAND TYPE	.00008 Amp		14.5 ns		NO
KFG2816U1M-DIB000	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm	7 mm	Not Qualified	134217728 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							9 mm	76 ns	2.7
KFG5616Q1M-DED00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm	9.5 mm	Not Qualified	268435456 bit	1.7 V								12 mm	76 ns	1.8
KFG2816D1M-DED00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm	7 mm	Not Qualified	134217728 bit	2.4 V								9 mm	76 ns	2.7
KFG5616U1M-DID00	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm	9.5 mm	Not Qualified	268435456 bit	2.7 V								12 mm	76 ns	2.7
KFG2816U1M-DIB00	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B67	2	3.6 V	1 mm	7 mm	Not Qualified	134217728 bit	2.7 V			e1					9 mm	76 ns	3.3
KFG5616Q1A-DEB50	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3	1.95 V	1 mm	7 mm	Not Qualified	268435456 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE	512	e1		260	SLC NAND TYPE	.00005 Amp	9 mm	76 ns	1.8	NO
KFM5616Q1A-DEB60	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	2	1.95 V	1 mm	7 mm	Not Qualified	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	512	e1			SLC NAND TYPE	.00005 Amp	9 mm	76 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.