8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25HS256TDPNHI010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHV013	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FL127SABNFA103	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.24	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0001 Amp	6 mm	3
S25FS512SAGNFN013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		128MX4	128M	-40 Cel		DUAL		R-PDSO-N8		2 V	.8 mm		133 MHz	6 mm				BOTTOM	536870912 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH				NOR TYPE		8 mm	1.8
S25FL256SDSNFM001	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FS128SDSMFI1D3	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm					134217728 bit	1.7 V		e3					5.283 mm	1.8
S25FL128LAGNFV410	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25HS512TDPNHV011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25FL128LDPNFN013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		66 MHz	5 mm					134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25FS256SAGNFB000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	1.8
S25FL256LDPNFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	5 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
S25FL127SABNFA101	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.24	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0001 Amp	6 mm	3
S25FS064SAGNFN033	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel		BOTTOM		R-XBGA-N8		2 V	.8 mm		133 MHz	5 mm					67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1						6 mm	1.8
S25FS128SAGNFA101	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	6 mm	1.8
S25HS256TDPNHA010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FL128SDSNFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25HS512TDPNHA013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25FS128SDSNFI000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	1.8
S25FL128SAGNFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL256LDPNFN411	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		66 MHz	6 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25FL256SDSNFA000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FS512SDSNFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR		YES	1		AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	1.7 V		e3			NOR TYPE	.0001 Amp	8 mm	1.8
S25FS256SDSNFV000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm	1.8
S25FL128LDPMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm	3
S25FL128LAGNFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	6 mm	3
S25FS128SDSNFM001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm	1.8
S25FL064LABNFV043	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					4 mm	3
S25FL064LABNFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FL128LAGNFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
S25HS512TDSNHV010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHV013	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FL032P0XNFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.55 mm		104 MHz	5 mm					33554432 bit	2.7 V							6 mm	3
S25FL128LDPNFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	6 mm	3
S25HS512TDPNHB010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25FS128SDSMFM1D0	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	5.28 mm	1.8
S25FL064LABMFN040	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE		1			1.27 mm	125 Cel		8MX8	8M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V							5.28 mm	3
S25FS512SDSNFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	1.7 V		e3			NOR TYPE	.0001 Amp	8 mm	1.8
S25FL064LABNFN013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3			NOR TYPE		4 mm	3
S25FL128SDSNFV001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FS128SAGNFV101	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	6 mm	1.8
S25FL128LAGNFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	6 mm	3
S25FL256SDSNFI001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL128LAGMFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm	3
S25HS256TDPNHI013	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FL127SABNFV100	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.24	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		134217728 bit	2.7 V		e3			NOR TYPE	.0003 Amp	6 mm	3
S25FL128LAGNFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25FL064LABNFM011	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FS064SAGMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	2 V	2.159 mm		133 MHz	5.283 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.