8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FS128SDSNFV003	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	1.8
S25FL128LAGNFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
S25FL128LDPMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm	3
S25FS512SAGNFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.0001 Amp	8 mm	1.8
S25HS256TDPNHI011	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FL064LABNFA040	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					4 mm	3
S25FS256SDSNFV003	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm	1.8
S25FL256LDPNFN013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		66 MHz	6 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25FS512SDSNFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR		YES	1		AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	1.7 V		e3			NOR TYPE	.0001 Amp	8 mm	1.8
S25HS256TFANHI011	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FS064SAGMFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel		DUAL		S-PDSO-G8		2 V	2.159 mm		133 MHz	5.283 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1						5.283 mm	1.8
S25HS256TFANHM013	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHM010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FS512SAGNFN011	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		128MX4	128M	-40 Cel		DUAL		R-PDSO-N8		2 V	.8 mm		133 MHz	6 mm				BOTTOM	536870912 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH				NOR TYPE		8 mm	1.8
S25FL128SDSNFM000	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL040A0LNFIV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		24 mA	524288 words		3/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3			100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit			e3	40	260	NOR TYPE	.000005 Amp
S25FS064SAGMFM011	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		67108864 bit	1.7 V					NOR TYPE	.0003 Amp	5.28 mm	1.8
S25FS128SAGNFA100	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	6 mm	1.8
S25FS128SDSMFI100	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	5.28 mm	1.8
S25FL116K0XMFIQ13	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm					16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		5.283 mm	3
S25FL116K0XMFA013	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	3
S25FL132K0XNFI041	Infineon Technologies	FLASH	INDUSTRIAL	8	VSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, VERY THIN PROFILE		2			.8 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1		NOT SPECIFIED	NOT SPECIFIED			4 mm	3
S25HL512TDPNHV013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL132K0XNFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	105 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	6 mm	3
S25FL132K0XNFB043	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						4 mm	3
S25HL512TDPNHM011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL164K0XNFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	6 mm	3
S25FL132K0XMFV040	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	105 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	4.9 mm	3
S25FL116K0XMFIQ11	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm					16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		5.283 mm	3
S25FL116K0XMFV040	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm		108 MHz	3.9 mm					16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		4.9 mm	3
S25FL132K0XNFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	6 mm	3
S25FL132K0XMFI010	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		33554432 bit	2.7 V					NOR TYPE	.000008 Amp	5.28 mm	3
S25HL512TFANHI010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHI011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL132K0XNFAQ11	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						6 mm	3
S25FL132K0XNFA043	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						4 mm	3
S25FL132K0XNFB041	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						4 mm	3
S25FL164K0XMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified		SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	5.283 mm	3
S25FL116K0XNFAQ11	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.85 mm			5 mm					16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						6 mm	3
S25HL512TFANHV013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL132K0XNFAQ13	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						6 mm	3
S25FL164K0XMFIQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm					67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE		5.283 mm	3
S25HL512TDPNHI010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHV011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL132K0XNFA041	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						4 mm	3
S25FL132K0XNFA040	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						4 mm	3
S25FL132K0XMFV043	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	105 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	4.9 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.