8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FL128LDPNFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	5 mm		SPI	134217728 bit	2.7 V					NOR TYPE	.00006 Amp	6 mm	3
S25FL256LDPNFN413	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		66 MHz	6 mm			268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25FL164K0XMFIQ11	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI	67108864 bit	2.7 V					NOR TYPE	.000008 Amp	5.28 mm	3
S25FS064SDSMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm		SPI	67108864 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
S25HS512TDPNHV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFANHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25FL116K0XMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		NOT SPECIFIED	NOT SPECIFIED			5.283 mm	3
S25FS064SDSNFV033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel		BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1						6 mm	1.8
S25HS512TFANHM010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25FS064SAGMFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI	67108864 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
S25FL040A0LNFIV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		24 mA	524288 words		3/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3			100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI	4194304 bit			e3	40	260	NOR TYPE	.000005 Amp
S25FL127SABMFB103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	3
S25FL128SAGNFM003	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		133 MHz	6 mm			134217728 bit	2.7 V	IT ALSO ORGANIZED AS 128M X 1	e3					8 mm	3
S25FL256LDPNFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	5 mm		SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
S25FL116K0XMFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		5.283 mm	3
S25FL127SABMFB101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	3
S25FS064SDSNFI033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel		BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1						6 mm	1.8
S25FS256SDSNFI000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	8 mm	1.8
S25FL128LAGNFV413	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm			134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25FL128LAGNFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	2.7 V					NOR TYPE	.00006 Amp	6 mm	3
S25FS064SAGMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	2 V	2.159 mm		133 MHz	5.283 mm			67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm	1.8
S25FS064SAGMFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI	67108864 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
S25FL164K0XNFA013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm		SPI	67108864 bit	2.7 V					NOR TYPE	.000008 Amp	6 mm	3
S25FS512SAGNFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	1.7 V		e3			NOR TYPE	.0001 Amp	8 mm	1.8
S25FL128LAGNFN411	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm			134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25FL132K0XMFB043	Infineon Technologies	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	105 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm		SPI	33554432 bit	2.7 V					NOR TYPE	.00001 Amp	4.9 mm	3
S25FL256LAGNFI411	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm			268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25FL132K0XNFV043	Infineon Technologies	FLASH	INDUSTRIAL	8	VSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, VERY THIN PROFILE		2			.8 mm	105 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm			33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1		NOT SPECIFIED	NOT SPECIFIED			4 mm	3
S25HS512TFANHI011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL512TFANHM010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL132K0XMFI043	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified	SPI	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	4.9 mm	3
S25FS128SDSNFM100	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
S25FL164K0XMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified	SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	5.283 mm	3
S25FS128SAGNFM100	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
S25FL116K0XMFAQ11	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						5.283 mm	3
S25HS512TDPNHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25FL064LABMFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm			67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm	3
S25FL128LDPNFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	5 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
S25FL116K0XNFAQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.85 mm			5 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						6 mm	3
S25FL132K0XMFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	105 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified	SPI	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	5.283 mm	3
S25FL132K0XMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm			33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1	e3	30	260			5.28 mm	3
S25FL116K0XMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		NOT SPECIFIED	NOT SPECIFIED			5.283 mm	3
S25HL512TDPNHI013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL116K0XMFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		5.283 mm	3
S25FL128LDPNFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	5 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
S25HL512TDPNHB013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FS128SAGNFI103	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
S25FL132K0XNFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm			33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						6 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.