8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FL116K0XMFAQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm				16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						5.283 mm	3
S25HL512TFANHA013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL164K0XNFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	6 mm	3
S25HL512TFANHV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL164K0XMFIQ13	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm				67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE		5.283 mm	3
S25FL116K0XNFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		6 mm	3
S25FL132K0XMFIQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm				33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE		5.283 mm	3
S25FL132K0XMFI040	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	4.9 mm	3
S25FL132K0XNFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
S25FL132K0XMFIQ13	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm				33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE		5.283 mm	3
S25FL116K0XNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE	.000005 Amp	6 mm	3
S25FL132K0XNFAQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						6 mm	3
S25FL132K0XMFB041	Infineon Technologies	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	105 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI	33554432 bit	2.7 V					NOR TYPE	.00001 Amp	4.9 mm	3
S25HL512TFANHB013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL132K0XNFIQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE		6 mm	3
S25FL164K0XMFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	5.28 mm	3
S25FL132K0XMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	105 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified		SPI	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3	40	260	NOR TYPE	.000005 Amp	5.283 mm	3
S25FL132K0XMFIQ11	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm				33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE		5.283 mm	3
S25FL116K0XNFAQ13	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.85 mm			5 mm				16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						6 mm	3
S25HL512TDPNHV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHM011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL129P0XNFV011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XNFI003	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XNFV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XNFV013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL256SAGNFE001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL064P0XNFV000	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFI003	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFV003	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFB003	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFB000	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFV001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFB001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XNFI000	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL127SABNFV103	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.24	4		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI	134217728 bit	2.7 V					NOR TYPE	.0003 Amp	6 mm	3
S25FL127SABNFV101	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.24	4		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI	134217728 bit	2.7 V					NOR TYPE	.0003 Amp	6 mm	3
S25FL256SAGNFE003	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL256SAGNFE000	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL128LDPMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm			SPI	134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm	3
S25FL256SDSNFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	6 mm		500 ms		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25HS256TFANHI010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI	268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHI010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI	268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8
S25FS128SDSNFB103	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	6 mm	1.8
S25FL128SAGNFA001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm		500 ms		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FS064SAGMFN011	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel		DUAL		S-PDSO-G8		2 V	2.159 mm		133 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1						5.283 mm	1.8
S25FS256SDSNFI001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	8 mm	1.8
S25FS128SDSNFI003	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	1.8
S25HS256TFANHV010	Infineon Technologies	FLASH		8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm			SPI	268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.