84 Flash Memory 406

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29WS256R0SBHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS128J0PBAI022	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS128J1ABAW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128J0PBAW030	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS128J1ABFI013	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128P0PBAW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	134217728 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128R0PBHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512P0LBAW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS256R0SBHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512PABBAW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128R0SBHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512RAABHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256RAABHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS128J1ABFI010	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS256R0SBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS128R0PBHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS256P0LBFW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128P0SBFW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	134217728 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128J0SBFI030	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128J0SBFW022	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS512R0PBHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512RAABHW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK					NOR TYPE		11.6 mm		80 ns	1.8
S29WS128PABBAW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128J0PBAI030	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS512P0SBFW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128J0SBAW033	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128J1ABFW010	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128P0LBAW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	134217728 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128J0PBFW033	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS064RABBHI003	Infineon Technologies	FLASH	INDUSTRIAL	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		11.6 mm		80 ns	1.8
S29WS256PABBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS256PABBAW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS512P0PBAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS256RAABHW020	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128J0PBAI032	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS512P0PBFW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS064R0SBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00007 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS512PABBFW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128J0SBAI023	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS256PABBAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128J1ABAI013	Infineon Technologies	FLASH	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84					Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128P0PBFW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128P0SBAW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	134217728 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS064R0PBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00007 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128POLBFW002	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	13.5 ns		YES
S29WS256P0LBAW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128R0SBHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm	8 mm		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		11.6 mm		80 ns	1.8
S29WS512POPBFW002	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3				Not Qualified	BOTTOM/TOP	536870912 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	11.2 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.