84 Flash Memory 406

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S71WS512RE0HH32A2	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S71WS512RE0HH30A0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V								11.6 mm		80 ns	1.8
S29PL256N70GAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified		268435456 bit	2.7 V			e0			NOR TYPE		11.6 mm		70 ns	3
S29PL256N70GAWW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	55 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84		3.1 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11.6 mm	YES	70 ns	3	YES
S71WS512RE0HH3292	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29PL256N70GFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified		268435456 bit	2.7 V			e1			NOR TYPE		11.6 mm		70 ns	3
S71WS512RE0HH3290	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S71WS512RE0HH30T2	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V								11.6 mm		80 ns	1.8
S71WS512RE0HH30S0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V								11.6 mm		80 ns	1.8
S29PL256N65GAWW02	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	55 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84		3.1 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11.6 mm	YES	65 ns	3	YES
S29PL256N65GFW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified		268435456 bit	2.7 V			e1			NOR TYPE		11.6 mm		65 ns	3
S71WS512RE0HH30T0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V								11.6 mm		80 ns	1.8
S29PL256N65GFWW00	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	55 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8	e1	40	260	NOR TYPE	.00004 Amp	11.6 mm	YES	65 ns	3	YES
S29PL256N70GFW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified		268435456 bit	2.7 V			e1			NOR TYPE		11.6 mm		70 ns	3
S29PL256N65GAWW00	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	55 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84		3.1 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11.6 mm	YES	65 ns	3	YES
S71WS512RE0HH30T3	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V								11.6 mm		80 ns	1.8
K8P5615UQA-DC4D0	Samsung	FLASH	COMMERCIAL	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY				70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B84		3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE				70 ns	2.7
K8P5615UQA-DE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84	3	3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P5615UQA-FI4D0	Samsung	FLASH	INDUSTRIAL	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84	3	3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					240	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P5615UQA-FC4D0	Samsung	FLASH	COMMERCIAL	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY				70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B84		3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE				70 ns	2.7
K8P5615UQA-FE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84	3	3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					240	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P5615UQA-DI4D0	Samsung	FLASH	INDUSTRIAL	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3		YES	3/3.3	16	GRID ARRAY	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84	3	3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.