88 Flash Memory 772

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PF48F2000P0ZBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES	BOTTOM	R-PBGA-B88	2 V	1.2 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	30	260	NOR TYPE	.000035 Amp	10 mm	YES	88 ns	1.8	NO
PF48F4000L0YBQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K		16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	268435456 bit			4			NOR TYPE			YES	85 ns		NO
PF48F3000W0YUQ0	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	40 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	BOTTOM	R-PBGA-B88				Not Qualified	TOP	134217728 bit			4			NOR TYPE	.000005 Amp		YES	60 ns		NO
M58LR256KT85ZQ5E	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	67 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	4,255	YES	BOTTOM	R-PBGA-B88				Not Qualified	TOP	268435456 bit			4			NOR TYPE	.00005 Amp		YES	85 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.