88 Flash Memory 772

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PF48F4400P0VBQEE	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES		BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM/TOP	536870912 bit							NOR TYPE	.00042 Amp		YES	100 ns		NO
PF48F4400P0VBQEF	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
PF48F4400P0VBQEK	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
EPC16UI88AA	Intel	CONFIGURATION MEMORY	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				BOTTOM	R-PBGA-B88	3.6 V	1.4 mm	100000 Write/Erase Cycles	66.7 MHz	8 mm	Not Qualified		16777216 bit	3 V							.00015 Amp	11 mm
PF48F4400P0VBQEA	Micron Technology	FLASH	INDUSTRIAL	88	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32	16	Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES		BOTTOM	R-PBGA-B88	2 V	1 mm			8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE			30	260	NOR TYPE	.00042 Amp	11 mm	YES	100 ns	1.8	NO
M30W0R7000T1ZAQF	STMicroelectronics	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	8388608 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	60 ns	1.8	NO
M30LW128D110ZE6F	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel		YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e1			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M30L0T8000B0ZAQE	STMicroelectronics	FLASH	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	2 V	1.4 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000B0ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30LW128D110ZE1T	STMicroelectronics	FLASH MODULE	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	70 Cel		8MX16	8M	0 Cel		YES	TIN LEAD	BOTTOM	R-PBGA-B88	3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e0			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M30W0R7000B1ZAQF	STMicroelectronics	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	8388608 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	60 ns	1.8	NO
M30W0R6500T0ZAQT	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			6291456 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		6MX16	6M	-40 Cel				BOTTOM	R-PBGA-B88	2.2 V	1.4 mm			8 mm	Not Qualified	TOP	100663296 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE					NOR TYPE		10 mm			3.3
M30L0T8000T2ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V		8		40	260	NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B0ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000T0ZAQT	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B1ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000T0ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000T1ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000T1ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B0ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0T8000B2ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8		40	260	NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M30LW128D110ZE6T	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel		YES	TIN LEAD	BOTTOM	R-PBGA-B88	3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e0			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M30L0R8000B2ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000T0ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000B0ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B0ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30LW128D110ZE1	STMicroelectronics	FLASH MODULE	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	70 Cel		8MX16	8M	0 Cel		YES	TIN LEAD	BOTTOM	R-PBGA-B88	3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e0			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M30W0R7000T1ZAQT	STMicroelectronics	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	8388608 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	60 ns	1.8	NO
M30L0R7000B1ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000T0ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000B0ZAQT	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000B0ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30W0R6500T0ZAQF	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			6291456 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		6MX16	6M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88	2.2 V	1.4 mm			8 mm	Not Qualified	TOP	100663296 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE		e1		260	NOR TYPE		10 mm			3.3
M30L0T8000B0ZAQF	STMicroelectronics	FLASH	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	2 V	1.4 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B1ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B1ZAQT	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0T8000T2ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V		8		40	260	NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000B0ZAQT	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R8000T2ZAQF	STMicroelectronics	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	77 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit			8				NOR TYPE	.000005 Amp		YES	85 ns		NO
M30L0R7000T0ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30W0R6500T0ZAQE	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			6291456 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		6MX16	6M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88	2.2 V	1.4 mm			8 mm	Not Qualified	TOP	100663296 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE		e1		260	NOR TYPE		10 mm			3.3
M30LW128D110ZE1F	STMicroelectronics	FLASH MODULE	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	70 Cel		8MX16	8M	0 Cel		YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e1			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M30LW128D110ZE6	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel		YES	TIN LEAD	BOTTOM	R-PBGA-B88	3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e0			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M30L0R8000B2ZAQE	STMicroelectronics	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	77 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit			8				NOR TYPE	.000005 Amp		YES	85 ns		NO
M30W0R7000B1ZAQT	STMicroelectronics	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	8388608 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	60 ns	1.8	NO
M30L0T8000B2ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8		40	260	NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000T1ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M30L0R7000T0ZAQT	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.