88 Flash Memory 772

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8A6215EBC-HC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6415ETC-DC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8F5615EBM-DC1E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B88	2	1.95 V	1.2 mm	8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8A6415EBC-FC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	1	1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6415EBC-SC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6415ETC-HE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8F5615EBM-FE1F	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6215ETC-HE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5715ETM-FC1E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8A6415ETC-FE7ET	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	TOP	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6415ETC-DE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6215EBC-SE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6215EBC-HC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6215EBC-FE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6415ETC-SC7B	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	TOP	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6415EBC-DC7BT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	BOTTOM	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6215EBC-FC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6515ETC-SC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6215EBC-DC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5615EBM-FC1D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8F5715EBM-DC1E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415ETC-HE7B	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	TOP	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6415ETC-SE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8F5715EBM-DE1F	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBC-FC7D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	BOTTOM	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6215ETC-SE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6315ETC-SC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5715ETM-DC1D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B88	2	1.95 V	1.2 mm	8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8A6515EBC-HE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6315EBC-HC7D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5715ETM-FC1ET	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBC-DE7ET	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	BOTTOM	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6315EBC-FC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5615ETM-FC1F	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6515ETC-HE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6315ETC-DE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6415ETC-SC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6415ETC-DC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6215ETC-SE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6515ETC-FC7D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6315ETC-SC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8A6415ETC-FE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	1	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6515ETC-SC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5615ETM-FE1DT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6315EBC-HE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F5715ETM-DE1DT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBC-SC7B	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	BOTTOM	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8F5615ETM-DC1D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.