HVSON Flash Memory 1,776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
AT25QL128A-MHE-T	Renesas Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	27 mA	8388608 words	1.8		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	2 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V				NOR TYPE	.00007 Amp	6 mm	1.8
AT25FF321A-MHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY			NOR TYPE	.00005 Amp	5 mm	3.3
AT25SF041-MAHD-T	Renesas Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		20	.5 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm		104 MHz	2 mm			SPI		4194304 bit	2.5 V				NOR TYPE	.000025 Amp	3 mm	3
AT25QF641B-MHB-B	Renesas Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	19 mA	4194304 words	3		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		67108864 bit	2.7 V				NOR TYPE	.000025 Amp	6 mm	3
AT25EU0041A-MAHN-T	Renesas Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		20	.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	10000 Write/Erase Cycles	108 MHz	2 mm			SPI		4194304 bit	2.3 V	ALSO OPERATES WITH 1.65V MIN @ 80MHZ			NOR TYPE	.000014 Amp	3 mm	3
M45PE40-VMP6P	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel			512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V				NOR TYPE	.00001 Amp	6 mm	2.7
M45PE10S-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm		23 ms			1048576 bit	2.7 V				NOR TYPE		6 mm	2.7
M45PE10-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	23 ms	SPI		1048576 bit	2.7 V		30	260	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE10-VMP6T	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL		R-XDSO-N8		3.6 V	1 mm		33 MHz	5 mm	Not Qualified				1048576 bit	2.7 V		30	235	NOR TYPE		6 mm	2.7
M45PE10S-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm		23 ms			1048576 bit	2.7 V				NOR TYPE		6 mm	2.7
M45PE40-VMP6T	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			512KX8	512K	-40 Cel	DUAL		R-XDSO-N8		3.6 V	1 mm		33 MHz	5 mm	Not Qualified				4194304 bit	2.7 V		30	235	NOR TYPE		6 mm	2.7
M45PE40-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel			512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE40-VMP6	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			512KX8	512K	-40 Cel	DUAL		R-XDSO-N8		3.6 V	1 mm		33 MHz	5 mm	Not Qualified				4194304 bit	2.7 V		30	235	NOR TYPE		6 mm	2.7
M45PE10-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	23 ms	SPI		1048576 bit	2.7 V		30	260	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE40-VMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel			256KX8	256K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI		2097152 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE10-VMP6	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL		R-XDSO-N8		3.6 V	1 mm		33 MHz	5 mm	Not Qualified				1048576 bit	2.7 V		30	235	NOR TYPE		6 mm	2.7
M45PE10S-VMP6P	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm		23 ms			1048576 bit	2.7 V				NOR TYPE		6 mm	2.7
M45PE10S-VMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128KX8	128K	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm		23 ms			1048576 bit	2.7 V				NOR TYPE		6 mm	2.7
N25Q032A41EF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			32MX1	32M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					33554432 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q128A13EF840G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm					134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
M25PX64-VMD3EB	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			8MX8	8M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	6 mm					67108864 bit	2.7 V				NOR TYPE		8 mm	2.7
N25Q256A23EF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			256MX1	256M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm					268435456 bit	2.7 V				NOR TYPE		8 mm	3
N25Q128A13TF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel			16MX8	16M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	TOP	134217728 bit	2.7 V		30	260	NOR TYPE	.0001 Amp	8 mm	3
M25P80S-VMP6P	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	NO		1MX8	1M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				NOR TYPE	.00001 Amp	6 mm	2.7
N25Q512A21GF8H0F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			512MX1	512M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					536870912 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q256A31EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			256MX1	256M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					268435456 bit	1.7 V						8 mm	1.8
N25Q032A41EF640F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			32MX1	32M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	5 mm					33554432 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q064A31EF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			64MX1	64M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					67108864 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q064A21EF640G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			64MX1	64M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	5 mm					67108864 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q128A11EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel			128MX1	128M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	1.7 V		30	260	NOR TYPE	.00001 Amp	8 mm	3
M25PX80SVMP3G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm					8388608 bit	2.7 V						6 mm	3
N25Q512A33GF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			512MX1	512M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm					536870912 bit	2.7 V				NOR TYPE		8 mm	3
N25Q064A31EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			64MX1	64M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					67108864 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q128A33EF7A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	.9 mm		108 MHz	5 mm					134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q128A33EF7A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	.9 mm		108 MHz	5 mm					134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q128A31EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					134217728 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q128A21EF7H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		2 V	.9 mm		108 MHz	5 mm					134217728 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q064A43EF6H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			64MX1	64M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	.9 mm		108 MHz	5 mm					67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q064A41EF8H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			64MX1	64M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					67108864 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q256A83EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			256MX1	256M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm					268435456 bit	2.7 V				NOR TYPE		8 mm	3
M25PX16SOVMP3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	125 Cel			2MX8	2M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	3
M25P40VMS6TX	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		524288 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			512KX8	512K	-40 Cel	DUAL		R-PDSO-N8		3.6 V	.9 mm		75 MHz	5 mm		15 ms			4194304 bit	2.7 V				NOR TYPE		6 mm	3
N25Q128A11EF740E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		2 V	.9 mm		108 MHz	5 mm					134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm	1.8
N25Q128A11EF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					134217728 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q128A13EF8H0F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			128MX1	128M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm					134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q256A41EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel			256MX1	256M	-40 Cel	DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm					268435456 bit	1.7 V						8 mm	1.8
M25PX64-VMD6EBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			8MX8	8M	-40 Cel	DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	6 mm					67108864 bit	2.7 V				NOR TYPE		8 mm	2.7
M25PX16SOVMP6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel			2MX8	2M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.