HVSON Flash Memory 1,776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
M25P40-VMP6TG/TS	Micron Technology	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm			SPI	4194304 bit	2.7 V			NOR TYPE	.00005 Amp	6 mm	2.7
M25PX32-VMP6EBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	4MX8	4M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				33554432 bit	2.7 V			NOR TYPE		6 mm	2.7
N25Q512A43GF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				536870912 bit	2.7 V			NOR TYPE		8 mm	3
N25Q128A21EF7H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V			NOR TYPE		6 mm	1.8
N25Q512A73GF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				536870912 bit	2.7 V			NOR TYPE		8 mm	3
N25Q064A43EF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q512A83GF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				536870912 bit	2.7 V			NOR TYPE		8 mm	3
N25Q256A41EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				268435456 bit	1.7 V					8 mm	1.8
N25Q128A43EF840G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				134217728 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
M25PX32SVMP6TA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	4MX8	4M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				33554432 bit	2.7 V					6 mm	2.7
N25Q128A23EF7H0F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				134217728 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q256A73EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V			NOR TYPE		8 mm	3
N25Q064A33EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q256A23EF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V			NOR TYPE		8 mm	3
N25Q064A21EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				67108864 bit	1.7 V			NOR TYPE		8 mm	1.8
N25Q128A41EF7H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V			NOR TYPE		6 mm	1.8
N25Q256A23EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V			NOR TYPE		8 mm	3
N25Q256A21EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				268435456 bit	1.7 V					8 mm	1.8
N25Q064A13EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	64MX1	64M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	3
N25Q128A31EF740G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V			NOR TYPE		6 mm	1.8
M25P128-VME6TPB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	16MX8	16M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	10000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified		SPI	134217728 bit	2.7 V	30	260	NOR TYPE	.0001 Amp	8 mm	2.7
N25Q256A11EF8H0F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				268435456 bit	1.7 V					8 mm	1.8
N25Q256A21EF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				268435456 bit	1.7 V					8 mm	1.8
N25Q064A23EF6H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
M25PX32SVMP3TB	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	4MX8	4M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				33554432 bit	2.7 V					6 mm	2.7
N25Q128A43EF740F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				134217728 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q128A23EF7A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				134217728 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q256A31EF8H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				268435456 bit	1.7 V					8 mm	1.8
N25Q512A31GF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
M25PX80STVMP3G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V					6 mm	3
N25Q064A43EF8H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
M25P40VMS6GX	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words		2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	.9 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	4194304 bit	2.7 V			NOR TYPE	.00001 Amp	6 mm	3
N25Q512A21GF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
N25Q032A31EF4A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.8 mm	125 Cel	32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	.6 mm		108 MHz	3 mm				33554432 bit	1.7 V			NOR TYPE		4 mm	1.8
M25PE80VMS6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI	8388608 bit	2.7 V			NOR TYPE	.00001 Amp	6 mm	2.7
N25Q064A33EF640F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
M25PX16-VMP3TGB	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	125 Cel	2MX8	2M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	3
N25Q256A73EF840G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V			NOR TYPE		8 mm	3
M25P05-AVMB6TP	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	Flash Memories		.5 mm	85 Cel	64KX8	64K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3.6 V	.6 mm	100000 Write/Erase Cycles	25 MHz	2 mm	Not Qualified		SPI	524288 bit	2.3 V	30	260	NOR TYPE	.000005 Amp	3 mm	2.7
N25Q032A31EF8H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				33554432 bit	1.7 V			NOR TYPE		8 mm	1.8
N25Q128A43EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				134217728 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q128A21EF740G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V			NOR TYPE		6 mm	1.8
M25PE80VMS6P	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI	8388608 bit	2.7 V			NOR TYPE	.00001 Amp	6 mm	2.7
N25Q128A21EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				134217728 bit	1.7 V			NOR TYPE		8 mm	1.8
M25PE20VMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	256KX8	256K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI	2097152 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
N25Q032A31EF8H0F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				33554432 bit	1.7 V			NOR TYPE		8 mm	1.8
N25Q064A31EF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				67108864 bit	1.7 V			NOR TYPE		8 mm	1.8
N25Q128A43EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				134217728 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED			8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.