HVSON Flash Memory 1,776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
N25Q064A23EF640G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q128A11EF7A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q064A13EW7D0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified	SPI		67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm	2.7
M25PX32-VMP6EA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		4MX8	4M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				33554432 bit	2.7 V				NOR TYPE		6 mm	2.7
N25Q128A11EF7A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q256A33EF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		256MX1	256M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V				NOR TYPE		8 mm	3
M25PX16SOVMP6EGBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				16777216 bit	2.7 V						6 mm	3
N25Q032A21EF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				33554432 bit	1.7 V				NOR TYPE		8 mm	1.8
N25Q512A31GF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				536870912 bit	1.7 V				NOR TYPE		8 mm	1.8
M25PX16STVMP6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	SPI		16777216 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	3
M25PX16-VMP6EGBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				16777216 bit	2.7 V						6 mm	3
M25PE10VMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	SPI		1048576 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
N25Q064A21EF6H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	5 mm				67108864 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q032A41EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				33554432 bit	1.7 V				NOR TYPE		8 mm	1.8
M25PX16SVMP6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	SPI		16777216 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	3
N25Q032A31EF4A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.8 mm	125 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	.6 mm		108 MHz	3 mm				33554432 bit	1.7 V				NOR TYPE		4 mm	1.8
N25Q128A23EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q128A43EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q032A21EF4H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.8 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	.6 mm		108 MHz	3 mm				33554432 bit	1.7 V				NOR TYPE		4 mm	1.8
N25Q064A13EF6H0G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q032A41EF440F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.8 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	.6 mm		108 MHz	3 mm				33554432 bit	1.7 V				NOR TYPE		4 mm	1.8
M25P80SVMP6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V		30	260	NOR TYPE		6 mm	2.7
N25Q128A13TF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	TOP	134217728 bit	2.7 V		30	260	NOR TYPE	.0001 Amp	8 mm	3
M25PX80STVMP3PB	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V						6 mm	3
N25Q512A43GF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				536870912 bit	2.7 V				NOR TYPE		8 mm	3
N25Q032A41EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				33554432 bit	1.7 V				NOR TYPE		8 mm	1.8
M25PX16SVMP6EPBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				16777216 bit	2.7 V						6 mm	3
N25Q128A11EF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				134217728 bit	1.7 V				NOR TYPE		8 mm	1.8
M25PX80-VMP6PBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V						6 mm	3
N25Q064A43EF640E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		108 MHz	5 mm				67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
M25PX80-VMP3GB	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V						6 mm	3
N25Q128A23EF8A0G	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q128A11EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				134217728 bit	1.7 V				NOR TYPE		8 mm	1.8
M25PX80STVMP6PBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V						6 mm	3
N25Q064A21EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		64MX1	64M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				67108864 bit	1.7 V				NOR TYPE		8 mm	1.8
M25P32SVME6TGB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		4MX8	4M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.85 mm		75 MHz	6 mm				33554432 bit	2.7 V	SEATED HGT-NOM			NOR TYPE		8 mm	2.7
N25Q032A21EF6A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	5 mm				33554432 bit	1.7 V				NOR TYPE		6 mm	1.8
M25P20S-VMP6GB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	2.7		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		256KX8	256K	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.9 mm		75 MHz	5 mm				2097152 bit	2.3 V				NOR TYPE		6 mm	2.7
M25PE10VMP3TG	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128KX8	128K	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				1048576 bit	2.7 V				NOR TYPE		6 mm	2.7
N25Q512A43GF8A0E	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		512MX1	512M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				536870912 bit	2.7 V				NOR TYPE		8 mm	3
N25Q032A21EF6A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	5 mm				33554432 bit	1.7 V				NOR TYPE		6 mm	1.8
N25Q128A41EF8H0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		128MX1	128M	-40 Cel	DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	6 mm				134217728 bit	1.7 V				NOR TYPE		8 mm	1.8
M25P40-VMP6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm		SPI		4194304 bit	2.7 V				NOR TYPE	.00005 Amp	6 mm	2.7
M25P40-VMP6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm		SPI		4194304 bit	2.7 V				NOR TYPE	.00005 Amp	6 mm	2.7
N25Q032A21EF440E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.8 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	2 V	.6 mm		108 MHz	3 mm				33554432 bit	1.7 V				NOR TYPE		4 mm	1.8
N25Q032A13EF4A0FTR	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.8 mm	125 Cel		32MX1	32M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	.6 mm		108 MHz	3 mm				33554432 bit	2.7 V				NOR TYPE		4 mm	3
M25PX80SOVMP3P	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V						6 mm	3
M25P80SVMP6PBA	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		1MX8	1M	-40 Cel	DUAL		R-PDSO-N8	3.6 V	1 mm		75 MHz	5 mm				8388608 bit	2.7 V				NOR TYPE		6 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.