HVSON Flash Memory 1,776

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

N25Q064A43EF8H0E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

N25Q032A31EF4H0G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.8 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

R-PDSO-N8

2 V

.6 mm

108 MHz

3 mm

33554432 bit

1.7 V

NOR TYPE

4 mm

1.8

N25Q064A41EF6H0F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

5 mm

67108864 bit

1.7 V

NOR TYPE

6 mm

1.8

N25Q064A13EF8H0G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

N25Q512A43GF8H0G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

536870912 bit

2.7 V

NOR TYPE

8 mm

3

M25PX16-VMP6TG

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

2097152 words

2.7

2.5/3.3

8

SMALL OUTLINE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

75 MHz

5 mm

Not Qualified

15 ms

SPI

16777216 bit

2.3 V

30

260

NOR TYPE

.00001 Amp

6 mm

3

M25PX32STVMP3TB

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

75 MHz

5 mm

33554432 bit

2.7 V

6 mm

2.7

N25Q064A31EF8H0G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

67108864 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q064A43EF6H0F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.9 mm

108 MHz

5 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

6 mm

3

N25Q064A33EF8A0E

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

N25Q128A33EF740E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.9 mm

108 MHz

5 mm

134217728 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

6 mm

3

N25Q256A33EF840E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

268435456 bit

2.7 V

30

260

NOR TYPE

8 mm

3

M25PX64-VME6G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

8388608 words

3

3/3.3

8

SMALL OUTLINE

SOLCC8,.3

Flash Memories

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

75 MHz

6 mm

Not Qualified

15 ms

SPI

67108864 bit

2.7 V

30

260

NOR TYPE

.00001 Amp

8 mm

2.7

N25Q064A23EF840E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

N25Q512A23GF8A0G

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

536870912 bit

2.7 V

NOR TYPE

8 mm

3

N25Q032A41EF8H0E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

33554432 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q512A73GF8A0E

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

536870912 bit

2.7 V

NOR TYPE

8 mm

3

N25Q032A41EF4H0E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.8 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

R-PDSO-N8

2 V

.6 mm

108 MHz

3 mm

33554432 bit

1.7 V

NOR TYPE

4 mm

1.8

N25Q128A13BF840E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

16777216 words

3

3/3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.3

Flash Memories

20

1.27 mm

85 Cel

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

108 MHz

6 mm

Not Qualified

SPI

BOTTOM

134217728 bit

2.7 V

30

260

NOR TYPE

.0001 Amp

8 mm

3

M25PX16SVMP6TPBA

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

2097152 words

3

2.5/3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

75 MHz

5 mm

Not Qualified

SPI

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

3

N25Q128A31EF840F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

134217728 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q128A41EF8A0F

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

134217728 bit

1.7 V

NOR TYPE

8 mm

1.8

M25PX32SVMP6EBA

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

75 MHz

5 mm

33554432 bit

2.7 V

NOR TYPE

6 mm

2.7

N25Q128A31EF8A0G

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

134217728 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q512A83GF8A0E

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

536870912 bit

2.7 V

NOR TYPE

8 mm

3

N25Q512A41GF8H0E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

536870912 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

536870912 bit

1.7 V

NOR TYPE

8 mm

1.8

M25P40VMB6TXX

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

524288 words

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.6 mm

75 MHz

2 mm

15 ms

4194304 bit

2.7 V

NOR TYPE

3 mm

3

N25Q128A11EF840G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

134217728 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

1.8

N25Q064A31EF640E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

5 mm

67108864 bit

1.7 V

NOR TYPE

6 mm

1.8

N25Q256A73EF8A0G

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

268435456 bit

2.7 V

NOR TYPE

8 mm

3

N25Q032A21EF440F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.8 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

R-PDSO-N8

2 V

.6 mm

108 MHz

3 mm

33554432 bit

1.7 V

NOR TYPE

4 mm

1.8

M25P32-VMP6GB

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

4194304 words

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

R-XDSO-N8

3.6 V

1 mm

75 MHz

5 mm

Not Qualified

33554432 bit

2.7 V

30

260

NOR TYPE

6 mm

2.7

N25Q128A33EF740F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.9 mm

108 MHz

5 mm

134217728 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

6 mm

3

N25Q064A41EF6A0E

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

5 mm

67108864 bit

1.7 V

NOR TYPE

6 mm

1.8

N25Q032A41EF6H0E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

5 mm

33554432 bit

1.7 V

NOR TYPE

6 mm

1.8

M25P128-VME6PB

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

16777216 words

3

3/3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.3

Flash Memories

20

1.27 mm

85 Cel

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

10000 Write/Erase Cycles

50 MHz

6 mm

Not Qualified

SPI

134217728 bit

2.7 V

30

260

NOR TYPE

.0001 Amp

8 mm

2.7

N25Q256A33EF8H0G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

268435456 bit

2.7 V

NOR TYPE

8 mm

3

N25Q064A21EF840E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

67108864 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q128A41EF8H0G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

134217728 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q256A83EF840E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

268435456 bit

2.7 V

NOR TYPE

8 mm

3

N25Q512A33GF8A0G

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

108 MHz

6 mm

536870912 bit

2.7 V

NOR TYPE

8 mm

3

N25Q064A23EF640E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.9 mm

108 MHz

5 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

6 mm

3

N25Q128A31EF840E

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

134217728 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q256A31EF8A0E

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

268435456 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

268435456 bit

1.7 V

8 mm

1.8

M25PX32SOVMP3TB

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1 mm

75 MHz

5 mm

33554432 bit

2.7 V

6 mm

2.7

M25P40-VMC6TP/4A

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

524288 words

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.8 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.6 mm

75 MHz

3 mm

4194304 bit

2.7 V

NOR TYPE

4 mm

2.7

N25Q064A41EF8H0F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

2 V

1 mm

108 MHz

6 mm

67108864 bit

1.7 V

NOR TYPE

8 mm

1.8

N25Q128A41EF7A0G

Micron Technology

FLASH

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

125 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-N8

2 V

.9 mm

108 MHz

5 mm

134217728 bit

1.7 V

NOR TYPE

6 mm

1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.