LGA Flash Memory 108

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FS064SAGNFN030	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFV030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
NAND16GW3C4AZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K		MLC NAND TYPE	.00005 Amp		20 ns		NO
NAND16GW3C4AZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K		MLC NAND TYPE	.00005 Amp		20 ns		NO
NAND16GW3C4AZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		2GX8	2G	0 Cel	8K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K		MLC NAND TYPE	.00005 Amp		20 ns		NO
NAND16GW3C4AZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		2GX8	2G	0 Cel	8K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K		MLC NAND TYPE	.00005 Amp		20 ns		NO
S25FS064SAGNFB033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0003 Amp	6 mm		1.8
S25FS064SDSNFV033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SDSNFI033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFI030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFM030	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	125 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0003 Amp	6 mm		1.8
S25FS064SAGNFI031	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFN033	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SDSNFI030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SDSNFN030	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFN031	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFB031	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0003 Amp	6 mm		1.8
S25FS064SDSNFN033	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFB030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0003 Amp	6 mm		1.8
S25FS064SDSNFV030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFM031	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	125 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0003 Amp	6 mm		1.8
S25FS064SAGNFA031	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0001 Amp	6 mm		1.8
S25FS064SDSNFV031	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SDSNFN031	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFI033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFA030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0001 Amp	6 mm		1.8
S25FS064SAGNFA033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0001 Amp	6 mm		1.8
S25FS064SDSNFI031	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		80 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFV031	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8		2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
S25FS064SAGNFM033	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100; TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	SOLCC8,.25	1		20	1.27 mm	125 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-XBGA-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	1.7 V				NOR TYPE	.0003 Amp	6 mm		1.8
S25FS064SAGNFV033	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm			67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1					6 mm		1.8
K9F4G08U1M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM			1						Not Qualified		4294967296 bit			2K			.00005 Amp		25 ns		NO
K9G8G08U0M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM									Not Qualified		8589934592 bit			2K			.00005 Amp		20 ns		NO
K9WAG08U1A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K			.0001 Amp		25 ns		NO
K9WBG08U1M-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		4GX8	4G	0 Cel	16K	YES		YES	BOTTOM									Not Qualified		34359738368 bit			4K			.0001 Amp		20 ns		NO
K9K8G08U1A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		1GX8	1G	0 Cel	8K	YES	MATTE TIN	YES	BOTTOM			1						Not Qualified		8589934592 bit			2K	e3		.00005 Amp		20 ns		NO
K9WAG08U1B-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K			.0002 Amp		25 ns		NO
K9F4G08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM			1						Not Qualified		4294967296 bit			2K			.00005 Amp		25 ns		NO
K9F8G08U0M-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	1073741824 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM									Not Qualified		8589934592 bit			4K			.00005 Amp		20 ns		NO
K9K2G08U1A-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM									Not Qualified		2147483648 bit			2K			.00005 Amp				NO
K9F2G08U0A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM									Not Qualified		2147483648 bit			2K			.00005 Amp		20 ns		NO
K9KAG08U1M-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			4K			.001 Amp		20 ns
K9F2G08U0M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		256MX8	256M	0 Cel	2K	YES	MATTE TIN	YES	BOTTOM			1						Not Qualified		2147483648 bit			2K	e3		.00005 Amp		30 ns		NO
K9WAG08U1B-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		2GX8	2G	0 Cel	16K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K			.0002 Amp		25 ns		NO
K9K8G08U1A-ICB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		1GX8	1G	-40 Cel	8K	YES	MATTE TIN	YES	BOTTOM			1						Not Qualified		8589934592 bit			2K	e3		.00005 Amp		25 ns		NO
K9WAG08U1A-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		2GX8	2G	0 Cel	16K	YES		YES	BOTTOM									Not Qualified		17179869184 bit			2K			.0001 Amp		25 ns		NO
K9HBG08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM									Not Qualified		34359738368 bit			2K			.0001 Amp		20 ns		NO
K9F4G08U0A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM			1						Not Qualified		4294967296 bit			2K	e3		.00005 Amp		20 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.