LGA Flash Memory 108
| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
512MX8 |
512M |
-40 Cel |
4K |
YES |
MATTE TIN |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
e3 |
.00005 Amp |
30 ns |
NO |
||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
35 mA |
4294967296 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
4GX8 |
4G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
34359738368 bit |
2K |
.0001 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
35 mA |
4294967296 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
4GX8 |
4G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
34359738368 bit |
2K |
.0001 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
2147483648 words |
3.3 |
3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
4K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
4K |
.001 Amp |
20 ns |
||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
512MX8 |
512M |
0 Cel |
4K |
YES |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
.00005 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
512MX8 |
512M |
-40 Cel |
4K |
YES |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
.00005 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
35 mA |
4294967296 words |
3.3 |
NO |
3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
4GX8 |
4G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
34359738368 bit |
4K |
.0001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
35 mA |
4294967296 words |
3.3 |
NO |
3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
4GX8 |
4G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
34359738368 bit |
4K |
260 |
.0001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
1073741824 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
1GX8 |
1G |
-40 Cel |
8K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
8589934592 bit |
2K |
260 |
.00005 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
256MX8 |
256M |
-40 Cel |
2K |
YES |
MATTE TIN |
YES |
BOTTOM |
1 |
Not Qualified |
2147483648 bit |
2K |
e3 |
.00005 Amp |
30 ns |
NO |
||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
256MX8 |
256M |
-40 Cel |
2K |
YES |
YES |
BOTTOM |
Not Qualified |
2147483648 bit |
2K |
.00005 Amp |
NO |
||||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
1073741824 words |
3.3 |
NO |
3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
1GX8 |
1G |
0 Cel |
4K |
YES |
YES |
BOTTOM |
Not Qualified |
8589934592 bit |
4K |
.00005 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
35 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
2GX8 |
2G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.0002 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
35 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.0002 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
35 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.0002 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
128K |
35 mA |
2147483648 words |
3.3 |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
2GX8 |
2G |
0 Cel |
16K |
YES |
MATTE TIN |
YES |
BOTTOM |
R-XBGA-N52 |
1 |
3.6 V |
1 mm |
12 mm |
Not Qualified |
17179869184 bit |
2.7 V |
2K |
e3 |
.0001 Amp |
17 mm |
25 ns |
2.7 |
NO |
|||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
20 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
256MX8 |
256M |
-40 Cel |
2K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
2147483648 bit |
2K |
260 |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
512MX8 |
512M |
-40 Cel |
4K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
4294967296 bit |
2K |
260 |
.00005 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
128K |
35 mA |
2147483648 words |
3.3 |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
16K |
YES |
MATTE TIN |
YES |
BOTTOM |
R-XBGA-N52 |
1 |
3.6 V |
1 mm |
12 mm |
Not Qualified |
17179869184 bit |
2.7 V |
2K |
e3 |
.0001 Amp |
17 mm |
25 ns |
2.7 |
NO |
|||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
256MX8 |
256M |
0 Cel |
2K |
YES |
YES |
BOTTOM |
Not Qualified |
2147483648 bit |
2K |
.00005 Amp |
NO |
||||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
512MX8 |
512M |
0 Cel |
4K |
YES |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
.00005 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
35 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
2GX8 |
2G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.0001 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
20 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
256MX8 |
256M |
0 Cel |
2K |
YES |
YES |
BOTTOM |
Not Qualified |
2147483648 bit |
2K |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
512MX8 |
512M |
0 Cel |
4K |
YES |
MATTE TIN |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
e3 |
.00005 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
35 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
17179869184 bit |
2K |
260 |
.0001 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
35 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
2GX8 |
2G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.0002 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
512MX8 |
512M |
-40 Cel |
4K |
YES |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
.00005 Amp |
25 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
35 mA |
4294967296 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
4GX8 |
4G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
34359738368 bit |
2K |
.0001 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
256MX8 |
256M |
-40 Cel |
2K |
YES |
YES |
BOTTOM |
Not Qualified |
2147483648 bit |
2K |
.00005 Amp |
NO |
||||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
20 mA |
268435456 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
256MX8 |
256M |
-40 Cel |
2K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
2147483648 bit |
2K |
260 |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
1073741824 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
1GX8 |
1G |
0 Cel |
4K |
YES |
YES |
BOTTOM |
Not Qualified |
8589934592 bit |
2K |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
512MX8 |
512M |
0 Cel |
4K |
YES |
MATTE TIN |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
e3 |
.00005 Amp |
30 ns |
NO |
||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
35 mA |
4294967296 words |
3.3 |
NO |
3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
4GX8 |
4G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
34359738368 bit |
4K |
.0001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
8K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
8K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
536870912 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
512MX8 |
512M |
-40 Cel |
4K |
YES |
MATTE TIN |
YES |
BOTTOM |
1 |
Not Qualified |
4294967296 bit |
2K |
e3 |
.00005 Amp |
25 ns |
NO |
||||||||||||||||||||||||||||||||
|
|
Samsung |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
128K |
30 mA |
1073741824 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
1GX8 |
1G |
-40 Cel |
8K |
YES |
YES |
BOTTOM |
3 |
Not Qualified |
8589934592 bit |
2K |
260 |
.00005 Amp |
20 ns |
NO |
|||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8589934592 words |
3.3 |
8 |
GRID ARRAY |
85 Cel |
8GX8 |
8G |
-40 Cel |
BOTTOM |
R-XBGA-N52 |
3.6 V |
1 mm |
14 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
18 mm |
3.3 |
||||||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
2GX8 |
2G |
-40 Cel |
8K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
MLC NAND TYPE |
.00005 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
1M |
50 mA |
17179869184 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
16GX8 |
16G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
137438953472 bit |
8K |
SLC NAND TYPE |
.00001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
2147483648 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
2GX8 |
2G |
0 Cel |
8K |
YES |
YES |
BOTTOM |
Not Qualified |
17179869184 bit |
2K |
MLC NAND TYPE |
.00005 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
1M |
50 mA |
17179869184 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
16GX8 |
16G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
137438953472 bit |
8K |
SLC NAND TYPE |
.00001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
1M |
50 mA |
NO |
3/3.3 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
-40 Cel |
32K |
YES |
YES |
BOTTOM |
Not Qualified |
274877906944 bit |
8K |
SLC NAND TYPE |
.00001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
17179869184 words |
3.3 |
8 |
GRID ARRAY |
85 Cel |
16GX8 |
16G |
-40 Cel |
BOTTOM |
R-XBGA-N52 |
3.6 V |
1 mm |
14 mm |
137438953472 bit |
2.7 V |
MLC NAND TYPE |
18 mm |
3.3 |
||||||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
1M |
50 mA |
17179869184 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
85 Cel |
16GX8 |
16G |
-40 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
137438953472 bit |
8K |
SLC NAND TYPE |
.00001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
1M |
50 mA |
17179869184 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
16GX8 |
16G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
137438953472 bit |
8K |
SLC NAND TYPE |
.00001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
1M |
50 mA |
17179869184 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
16GX8 |
16G |
0 Cel |
16K |
YES |
YES |
BOTTOM |
Not Qualified |
137438953472 bit |
8K |
SLC NAND TYPE |
.00001 Amp |
20 ns |
NO |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
COMMERCIAL |
52 |
LGA |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
PARALLEL |
256K |
30 mA |
1073741824 words |
NO |
3/3.3 |
8 |
GRID ARRAY |
LGA52(UNSPEC) |
Flash Memories |
70 Cel |
1GX8 |
1G |
0 Cel |
4K |
YES |
YES |
BOTTOM |
Not Qualified |
8589934592 bit |
2K |
MLC NAND TYPE |
.00005 Amp |
20 ns |
NO |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.