QCCJ Flash Memory 2,332

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F010A-12C3FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel				QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		13.97 mm	120 ns	12
TMS28F020-10C5FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		2097152 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	100 ns	12	NO
TMS28F010A-12C3FME4	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel				QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		13.97 mm	120 ns	12
TMS28F210-17C3FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		YES		QUAD	S-PQCC-J44		5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F512-12C3FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		64KX8	64K	-40 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS29F816FML	Texas Instruments	FLASH	COMMERCIAL	18	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS			2048 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		2KX8	2K	0 Cel				QUAD	R-PQCC-J18		5.5 V	3.55 mm		7.366 mm	Not Qualified		16384 bit	4.5 V					NOR TYPE		12.445 mm		5
TMS28F010-12C3FME4	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F210-12C3FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES		QUAD	S-PQCC-J44		5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F512-15C4FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F010A-15C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F010A-17C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES				NOR TYPE		13.97 mm	170 ns	12
TMS28F512-15C2FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS29VF040-15C5FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES		QUAD	R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	3	YES
CAT28F001NI-12TE7	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD	QUAD	R-PQCC-J32	3		3.55 mm		11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e0			NOR TYPE		13.97 mm	120 ns	12
CAT28F001N-90T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE	.000001 Amp	13.97 mm	90 ns	12	NO
CAT28F001GI-90TE13	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			MATTE TIN	QUAD	R-PQCC-J32	3		3.55 mm		11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e3			NOR TYPE		13.97 mm	90 ns	12
CAT28F010NA-70T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			10	1.27 mm	105 Cel		128KX8	128K	-40 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS	e0			NOR TYPE		13.97 mm	70 ns	12
CAT28F010GI-90TE13	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		13.97 mm	90 ns	12
CAT28F001NA-90T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE	.000001 Amp	13.97 mm	90 ns	12	NO
CAT28F020GA-90T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	105 Cel		256KX8	256K	-40 Cel		YES		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		2097152 bit	4.75 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F010N-12	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel		YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
CAT28F010G90	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel		YES	Tin (Sn)	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F001N-70T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE		13.97 mm	70 ns	12
CAT28F512NI-15TE7	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		524288 bit	4.5 V		e0					13.97 mm	150 ns	12
CAT28F001GI-12TT	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES	TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK	e3		260	NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
CAT28F020G-12T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		2097152 bit	4.5 V		e3		260	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
CAT28F001G-90BT	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	Tin (Sn)	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.000001 Amp	13.97 mm	90 ns	12	NO
CAT28F512G-90T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V		e3			NOR TYPE	.00001 Amp	13.97 mm	90 ns	12	NO
CAT28F010N-12TE7	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE		13.97 mm	120 ns	12
CAT28F010G-12TE7	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		128KX8	128K	0 Cel			MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		13.97 mm	120 ns	12
CAT28F001N-90TE13	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3		3.55 mm		11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e0			NOR TYPE		13.97 mm	90 ns	12
CAT28F001NA-12B	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK				NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
CAT28F020N-12T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		2097152 bit	4.5 V		e0		235	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
CAT28F020N-12TE7	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		2097152 bit	4.5 V		e0			NOR TYPE		13.97 mm	120 ns	12
CAT28F001G-90TE13	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		128KX8	128K	0 Cel			MATTE TIN	QUAD	R-PQCC-J32	3		3.55 mm		11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e3			NOR TYPE		13.97 mm	90 ns	12
CAT28F512GI-15	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V		e3			NOR TYPE	.00001 Amp	13.97 mm	150 ns	12	NO
CAT28F001GI-90BT	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES	Tin (Sn)	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.000001 Amp	13.97 mm	90 ns	12	NO
CAT28F001N-15BT	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			10	1.27 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		13.97 mm	150 ns	12
CAT28F020G-90T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		2097152 bit	4.75 V		e3		260	NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F512GI-12TE13	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel			MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		524288 bit	4.5 V		e3					13.97 mm	120 ns	12
CAT28F001N-12T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK	e0		235	NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
CAT28F001N-70BT	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			10	1.27 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		13.97 mm	70 ns	12
CAT28F020NA-12	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	105 Cel		256KX8	256K	-40 Cel		YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		2097152 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
CAT28F001NI-90TE7	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD	QUAD	R-PQCC-J32	3		3.55 mm		11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e0			NOR TYPE		13.97 mm	90 ns	12
CAT28F010G-90T	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel		YES	TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V		e3		260	NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F512V5NI-12	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel				QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		524288 bit	4.5 V					NOR TYPE		13.97 mm	120 ns	5
CAT28F001NI-15TE7	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD	QUAD	R-PQCC-J32	3		3.55 mm		11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e0			NOR TYPE		13.97 mm	150 ns	12
CAT28F512GI-12TE7	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel			MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm		11.43 mm	Not Qualified		524288 bit	4.5 V		e3					13.97 mm	120 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.